參數資料
型號: HYB3166165AT-50
廠商: SIEMENS A G
元件分類: DRAM
英文描述: 4M x 16-Bit Dynamic RAM
中文描述: 4M X 16 EDO DRAM, 50 ns, PDSO50
文件頁數: 15/29頁
文件大小: 284K
代理商: HYB3166165AT-50
Semiconductor Group
15
HYB3164(5/6)165AT(L)-40/-50/-60
4M x 16 EDO-DRAM
Write Cycle (Early Write)
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RAS
UCAS
LCAS
Address
WE
OE
I/O
(Inputs)
I/O
(Outputs)
VIH
VIL
VIH
VIL
VIH
VIL
VIH
VIL
VIH
VIL
VIH
VIL
VOH
VOL
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t
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Valid Data In
t
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t
DH
Hi Z
Column
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Row
Row
t
RAH
t
WCS
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“H” or “L”
WL2
相關PDF資料
PDF描述
HYB3164165BT-50 4M x 16-Bit Dynamic RAM
HYB3165165BT-50 4M x 16-Bit Dynamic RAM
HYB3166165BT-50 4M x 16-Bit Dynamic RAM
HYB3164165BT-60 4M x 16-Bit Dynamic RAM
HYB3165165BT-60 4M x 16-Bit Dynamic RAM
相關代理商/技術參數
參數描述
HYB3166165AT-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 16-Bit Dynamic RAM
HYB3166165ATL-50 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 16-Bit Dynamic RAM
HYB3166165ATL-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 16-Bit Dynamic RAM
HYB3166165BT-40 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 16-Bit Dynamic RAM
HYB3166165BT-50 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 16-Bit Dynamic RAM