參數(shù)資料
型號: HYB3165405BTL-60
廠商: SIEMENS A G
元件分類: DRAM
英文描述: Wideband, Low Distortion Fully Differential Amplifier with Shutdown 8-SOIC -40 to 85
中文描述: 16M X 4 EDO DRAM, 60 ns, PDSO32
封裝: 0.400 INCH, PLASTIC, TSOP2-32
文件頁數(shù): 4/32頁
文件大?。?/td> 473K
代理商: HYB3165405BTL-60
Semiconductor Group
92
HYB3164(5)405J/T(L)-50/-60
16M x 4-DRAM
TRUTH TABLE
FUNCTION
RAS
CAS
WRITE
OE
ROW
ADDR
COL
ADDR
I/O1-
I/O4
Standby
H
H - X
X
X
X
X
High Impedance
Read
L
L
H
L
ROW
COL
Data Out
Early-Write
L
L
L
X
ROW
COL
Data In
Delayed-Write
L
L
H - L
H
ROW
COL
Data In
Read-Modify-Write
L
L
H - L
L - H
ROW
COL
Data Out, Data In
Hyper Page Mode Read
1st Cycle
L
H - L
H
L
ROW
COL
Data Out
2nd Cycle
L
H - L
H
L
n/a
COL
Data Out
Hyper Page Mode Write 1st Cycle
L
H - L
L
X
ROW
COL
Data In
2nd Cycle
L
H - L
L
X
n/a
COL
Data In
Hyper Page Mode RMW 1st Cycle
L
H - L
H - L
L - H
ROW
COL
Data Out, Data In
2st Cycle
L
H - L
H - L
L - H
n/a
COL
Data Out, Data In
RAS only refresh
L
H
X
X
ROW
n/a
High Impedance
CAS-before-RAS refresh
H - L
L
H
X
X
n/a
High Impedance
Test Mode Entry
H - L
L
L
X
X
n/a
High Impedance
Hidden Refresh
READ
L-H-L
L
H
L
ROW
COL
Data Out
WRITE
L-H-L
L
L
X
ROW
COL
Data In
Self Refresh
(L-version only)
H - L
L
H
X
X
X
High Impedance
相關(guān)PDF資料
PDF描述
HYB3165405T-50 16M x 4-Bit Dynamic RAM
HYB3165405T-60 Wideband, Low-Distortion Fully Differential Amplifier 8-SOIC -40 to 85
HYB3164405ATL-50 16M x 4-Bit Dynamic RAM
HYB3165405ATL-50 16M x 4-Bit Dynamic RAM
HYB3164405ATL-60 16M x 4-Bit Dynamic RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB3165405J-50 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16M x 4-Bit Dynamic RAM
HYB3165405J-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16M x 4-Bit Dynamic RAM
HYB3165405T-50 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16M x 4-Bit Dynamic RAM
HYB3165405T-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16M x 4-Bit Dynamic RAM
HYB3165405TL-50 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16M x 4-Bit Dynamic RAM