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參數(shù)資料
| 型號(hào)： | HYB3165400T-60 |
| 廠商： | SIEMENS A G |
| 元件分類： | DRAM |
| 英文描述： | 16M x 4-Bit Dynamic RAM |
| 中文描述： | 16M X 4 FAST PAGE DRAM, 60 ns, PDSO34 |
| 文件頁數(shù)： | 9/26頁 |
| 文件大?。?/td> | 246K |
| 代理商： | HYB3165400T-60 |
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Semiconductor Group
9
HYB3164(5)400AJ/AT(L)-40/-50/-60
16M x 4-DRAM
AC Characteristics
(note: 6,7,8)
AC64-2F
T
A
= 0 to 70 °C,
V
CC
= 3.3
±
0.3V
Parameter
Symbol
-40
-50
-60
Unit
Note
min.
max. min.
max. min.
max.
Common Parameters
Random read or write cycle time
t
RC
t
RAS
t
CAS
t
RP
t
CP
t
ASR
t
RAH
t
ASC
t
CAH
t
RCD
t
RAD
t
RSH
t
CSH
t
CRP
t
T
t
REF
t
REF
t
REF
75
–
90
–
110
–
ns
RAS pulse width
40
100k
50
100k
60
100k
ns
CAS pulse width
10
100k
13
100k
15
100k
ns
RAS precharge time
25
–
30
–
40
–
ns
CAS precharge time
10
–
10
–
10
–
ns
Row address setup time
0
–
0
–
0
–
ns
Row address hold time
Column address setup time
5
0
–
–
7
0
–
–
10
0
–
–
ns
ns
Column address hold time
5
–
7
–
10
–
ns
RAS to CAS delay time
15
30
17
37
20
45
ns
RAS to column address delay
10
20
12
25
15
30
ns
RAS hold time
10
–
13
–
15
–
ns
CAS hold time
40
–
50
–
60
–
ns
CAS to RAS precharge time
5
–
5
–
5
–
ns
Transition time (rise and fall)
1
30
1
30
1
30
ns
7
Refresh period for 8k-refresh
–
128
–
128
–
128
ms
Refresh period for 4k-refresh
–
64
–
64
–
64
ms
Refresh period for L-versions
–
256
–
256
–
256
ms
Read Cycle
Access time from RAS
t
RAC
t
CAC
t
AA
t
OEA
–
40
–
50
–
60
ns
8, 9
Access time from CAS
–
10
–
13
–
15
ns
8, 9
Access time from column address
–
20
–
25
–
30
ns
8, 10
OE access time
–
10
–
13
–
15
ns
8
Column address to RAS lead time
t
RAL
Read command setup time
20
0
–
–
25
0
–
–
30
0
–
–
ns
ns
t
RCS
t
RCH
t
RRH
Read command hold time
0
–
0
–
0
–
ns
11
Read command hold time
referenced to RAS
0
–
0
–
0
–
ns
11
CAS to output in low-Z
t
CLZ
0
–
0
–
0
–
ns
8
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYB3164400AJ-60 | 16M x 4-Bit Dynamic RAM |
| HYB3165400AJ-60 | Bipolar Transistor; Collector Emitter Voltage, Vceo:75V; Power Dissipation, Pd:1.67W; DC Current Gain Min (hfe):120; C-E Breakdown Voltage:75V; Collector Current:1A; Transistor Polarity:NPN RoHS Compliant: Yes |
| HYB3164400AJ-40 | 16M x 4-Bit Dynamic RAM |
| HYB3165400AJ-40 | 16M x 4-Bit Dynamic RAM |
| HYB3164400AJ | High-Speed Fully-Differential Amplifiers 8-MSOP 0 to 70 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB3165405AJ-40 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16M x 4-Bit Dynamic RAM |
| HYB3165405AJ-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16M x 4-Bit Dynamic RAM |
| HYB3165405AJ-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16M x 4-Bit Dynamic RAM |
| HYB3165405AT-40 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16M x 4-Bit Dynamic RAM |
| HYB3165405AT-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16M x 4-Bit Dynamic RAM |
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