參數(shù)資料
型號: HYB3165400T-60
廠商: SIEMENS A G
元件分類: DRAM
英文描述: 16M x 4-Bit Dynamic RAM
中文描述: 16M X 4 FAST PAGE DRAM, 60 ns, PDSO34
文件頁數(shù): 14/26頁
文件大?。?/td> 246K
代理商: HYB3165400T-60
Semiconductor Group
14
HYB3164(5)400AJ/AT(L)-40/-50/-60
16M x 4-DRAM
Write Cycle (Early Write)
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I/O
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Hi Z
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“H” or “L”
WL2
相關(guān)PDF資料
PDF描述
HYB3164400AJ-60 16M x 4-Bit Dynamic RAM
HYB3165400AJ-60 Bipolar Transistor; Collector Emitter Voltage, Vceo:75V; Power Dissipation, Pd:1.67W; DC Current Gain Min (hfe):120; C-E Breakdown Voltage:75V; Collector Current:1A; Transistor Polarity:NPN RoHS Compliant: Yes
HYB3164400AJ-40 16M x 4-Bit Dynamic RAM
HYB3165400AJ-40 16M x 4-Bit Dynamic RAM
HYB3164400AJ High-Speed Fully-Differential Amplifiers 8-MSOP 0 to 70
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB3165405AJ-40 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16M x 4-Bit Dynamic RAM
HYB3165405AJ-50 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16M x 4-Bit Dynamic RAM
HYB3165405AJ-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16M x 4-Bit Dynamic RAM
HYB3165405AT-40 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16M x 4-Bit Dynamic RAM
HYB3165405AT-50 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16M x 4-Bit Dynamic RAM