參數(shù)資料
型號： HYB3165400AJ-60
廠商： SIEMENS A G
元件分類： DRAM
英文描述： Bipolar Transistor; Collector Emitter Voltage, Vceo:75V; Power Dissipation, Pd:1.67W; DC Current Gain Min (hfe):120; C-E Breakdown Voltage:75V; Collector Current:1A; Transistor Polarity:NPN RoHS Compliant: Yes
中文描述： 16M X 4 FAST PAGE DRAM, 60 ns, PDSO32
文件頁數(shù)： 15/26頁
文件大?。?/td> 246K
代理商： HYB3165400AJ-60
Semiconductor Group
15
HYB3164(5)400AJ/AT(L)-40/-50/-60
16M x 4-DRAM
Write Cycle (OE Controlled Write)
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Valid Data
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DZC
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“H” or “L”
Hi-Z
Hi-Z
Column
Row
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ASC
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RAD
t
RAL
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CAH
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RAH
RAS
CAS
Address
WE
OE
I/O
(Inputs)
I/O
(Outputs)
VIH
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VIH
VIL
VIH
VIL
VIH
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VIH
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VOH
VOL
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RCD
.
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RAS
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CSH
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CAS
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RP
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ASR
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ASR
WL3
相關(guān)PDF資料
PDF描述
HYB3164400AJ-40 16M x 4-Bit Dynamic RAM
HYB3165400AJ-40 16M x 4-Bit Dynamic RAM
HYB3164400AJ High-Speed Fully-Differential Amplifiers 8-MSOP 0 to 70
HYB3164400AT-50 High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD 0 to 70
HYB3164400T-50 High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD 0 to 70
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB3165400AT-40 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16M x 4-Bit Dynamic RAM
HYB3165400AT-50 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16M x 4-Bit Dynamic RAM
HYB3165400AT-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16M x 4-Bit Dynamic RAM
HYB3165400J-50 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16M x 4-Bit Dynamic RAM
HYB3165400J-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16M x 4-Bit Dynamic RAM
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