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參數(shù)資料
| 型號： | HYB3165400AJ-60 |
| 廠商： | SIEMENS A G |
| 元件分類： | DRAM |
| 英文描述： | Bipolar Transistor; Collector Emitter Voltage, Vceo:75V; Power Dissipation, Pd:1.67W; DC Current Gain Min (hfe):120; C-E Breakdown Voltage:75V; Collector Current:1A; Transistor Polarity:NPN RoHS Compliant: Yes |
| 中文描述： | 16M X 4 FAST PAGE DRAM, 60 ns, PDSO32 |
| 文件頁數(shù)： | 14/26頁 |
| 文件大小： | 246K |
| 代理商： | HYB3165400AJ-60 |
Semiconductor Group
14
HYB3164(5)400AJ/AT(L)-40/-50/-60
16M x 4-DRAM
Write Cycle (Early Write)
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相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYB3164400AJ-40 | 16M x 4-Bit Dynamic RAM |
| HYB3165400AJ-40 | 16M x 4-Bit Dynamic RAM |
| HYB3164400AJ | High-Speed Fully-Differential Amplifiers 8-MSOP 0 to 70 |
| HYB3164400AT-50 | High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD 0 to 70 |
| HYB3164400T-50 | High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD 0 to 70 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB3165400AT-40 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16M x 4-Bit Dynamic RAM |
| HYB3165400AT-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16M x 4-Bit Dynamic RAM |
| HYB3165400AT-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16M x 4-Bit Dynamic RAM |
| HYB3165400J-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16M x 4-Bit Dynamic RAM |
| HYB3165400J-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16M x 4-Bit Dynamic RAM |
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