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參數(shù)資料
| 型號(hào)： | HYB3165165BTL-50 |
| 廠商： | SIEMENS A G |
| 元件分類： | DRAM |
| 英文描述： | 4M x 16-Bit Dynamic RAM |
| 中文描述： | 4M X 16 EDO DRAM, 50 ns, PDSO50 |
| 封裝： | 0.400 INCH, PLASTIC, TSOP2-50 |
| 文件頁(yè)數(shù)： | 10/29頁(yè) |
| 文件大?。?/td> | 284K |
| 代理商： | HYB3165165BTL-50 |
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Semiconductor Group
10
HYB3164(5/6)165AT(L)-40/-50/-60
4M x 16 EDO-DRAM
AC Characteristics
5)6)
AC64-2E
T
A
= 0 to 70 °C,
V
CC
= 3.3 V
±
0.3V ,
t
T
= 2 ns
Parameter
Symbol
Limit Values
Unit
Note
- 40
- 50
- 60
min.
max.
min.
max.
min.
max.
Common Parameters
Random read or write cycle time
t
RC
t
RAS
t
CAS
t
RP
t
CP
t
ASR
t
RAH
t
ASC
t
CAH
t
RCD
t
RAD
t
RSH
t
CSH
t
CRP
t
T
69
–
84
–
104
–
ns
RAS pulse width
40
100k
50
100k
60
100k
ns
CAS pulse width
6
100k
8
100k
10
100k
ns
RAS precharge time
25
–
30
–
40
–
ns
CAS precharge time
Row address setup time
6
0
–
–
8
0
–
–
10
0
–
–
ns
ns
Row address hold time
5
–
7
–
10
–
ns
Column address setup time
0
–
0
–
0
–
ns
Column address hold time
5
–
7
–
10
–
ns
RAS to CAS delay time
9
30
11
37
14
45
ns
RAS to column address delay time
7
20
9
25
12
30
ns
RAS hold time
6
–
8
10
–
ns
CAS hold time
32
–
40
48
–
ns
CAS to RAS precharge time
5
–
5
–
5
–
ns
Transition time (rise and fall)
1
50
1
50
1
50
ns
7
Refresh period for 8k-refresh-version
t
REF
Refresh period for 4k-refresh version
t
REF
Refresh period for L-versions
–
128
–
128
–
128
ms
–
64
–
64
–
64
ms
t
REF
–
256
–
256
–
256
ms
Read Cycle
Access time from RAS
t
RAC
t
CAC
t
AA
t
OEA
t
RAL
t
RCS
t
RCH
–
40
–
50
–
60
ns
8, 9
Access time from CAS
–
10
–
13
–
15
ns
8, 9
Access time from column address
OE access time
–
–
20
10
–
–
25
13
–
–
30
15
ns
ns
8,10
Column address to RAS lead time
20
–
25
–
30
–
ns
Read command setup time
0
–
0
–
0
–
ns
Read command hold time
0
–
0
–
0
–
ns
11
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYB3166165BTL-50 | 4M x 16-Bit Dynamic RAM |
| HYB3164165AT | High-Speed Fully-Differential Amplifiers 8-MSOP 0 to 70 |
| HYB3164165BT | High-Speed Fully-Differential Amplifiers 8-MSOP 0 to 70 |
| HYB3165165ATL-50 | 4M x 16-Bit Dynamic RAM |
| HYB3165165ATL-60 | 4M x 16-Bit Dynamic RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB3165165BTL-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 16-Bit Dynamic RAM |
| HYB3165165T-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 16-Bit Dynamic RAM |
| HYB3165165T-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 16-Bit Dynamic RAM |
| HYB3165165TL-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 16-Bit Dynamic RAM |
| HYB3165165TL-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 16-Bit Dynamic RAM |
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