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相關(guān)PDF資料	PDF描述
HYB3165400T-60	16M x 4-Bit Dynamic RAM
HYB3164400AJ-60	16M x 4-Bit Dynamic RAM
HYB3165400AJ-60	Bipolar Transistor; Collector Emitter Voltage, Vceo:75V; Power Dissipation, Pd:1.67W; DC Current Gain Min (hfe):120; C-E Breakdown Voltage:75V; Collector Current:1A; Transistor Polarity:NPN RoHS Compliant: Yes
HYB3164400AJ-40	16M x 4-Bit Dynamic RAM
HYB3165400AJ-40	16M x 4-Bit Dynamic RAM

相關(guān)PDF資料

PDF描述

16M x 4-Bit Dynamic RAM

Bipolar Transistor; Collector Emitter Voltage, Vceo:75V; Power Dissipation, Pd:1.67W; DC Current Gain Min (hfe):120; C-E Breakdown Voltage:75V; Collector Current:1A; Transistor Polarity:NPN RoHS Compliant: Yes

HYB3164400AJ-40

16M x 4-Bit Dynamic RAM

HYB3165400AJ-40

16M x 4-Bit Dynamic RAM

相關(guān)代理商/技術(shù)參數(shù)	參數(shù)描述
HYB3164405AJ	制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16M x 4-Bit Dynamic RAM
HYB3164405AJ-40	制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16M x 4-Bit Dynamic RAM
HYB3164405AJ-50	制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16M x 4-Bit Dynamic RAM
HYB3164405AJ-60	制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16M x 4-Bit Dynamic RAM
HYB3164405AT-40	制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16M x 4-Bit Dynamic RAM

相關(guān)代理商/技術(shù)參數(shù)

參數(shù)描述

HYB3164405AJ