參數(shù)資料
型號(hào)： HYB3164400AT-60
廠商： SIEMENS A G
元件分類： DRAM
英文描述： 16M x 4-Bit Dynamic RAM
中文描述： 16M X 4 FAST PAGE DRAM, 60 ns, PDSO32
文件頁(yè)數(shù)： 19/26頁(yè)
文件大?。?/td> 246K
代理商： HYB3164400AT-60
Semiconductor Group
19
HYB3164(5)400AJ/AT(L)-40/-50/-60
16M x 4-DRAM
Fast Page Mode Read-Modify-Write Cycle
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相關(guān)PDF資料
PDF描述
HYB3165400AT-60 16M x 4-Bit Dynamic RAM
HYB3164400T-60 16M x 4-Bit Dynamic RAM
HYB3165400T-60 16M x 4-Bit Dynamic RAM
HYB3164400AJ-60 16M x 4-Bit Dynamic RAM
HYB3165400AJ-60 Bipolar Transistor; Collector Emitter Voltage, Vceo:75V; Power Dissipation, Pd:1.67W; DC Current Gain Min (hfe):120; C-E Breakdown Voltage:75V; Collector Current:1A; Transistor Polarity:NPN RoHS Compliant: Yes
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB3164400J 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16M x 4-Bit Dynamic RAM
HYB3164400J-50 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16M x 4-Bit Dynamic RAM
HYB3164400J-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16M x 4-Bit Dynamic RAM
HYB3164400T-50 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16M x 4-Bit Dynamic RAM
HYB3164400T-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16M x 4-Bit Dynamic RAM
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