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參數(shù)資料
| 型號： | HYB3164165BTL-60 |
| 廠商： | SIEMENS A G |
| 元件分類： | DRAM |
| 英文描述： | INDUCTOR CHIP .10UH 5% 0805 SMD |
| 中文描述： | 4M X 16 EDO DRAM, 60 ns, PDSO50 |
| 封裝： | 0.400 INCH, PLASTIC, TSOP2-50 |
| 文件頁數(shù)： | 17/29頁 |
| 文件大小： | 284K |
| 代理商： | HYB3164165BTL-60 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁當前第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁
Semiconductor Group
17
HYB3164(5/6)165AT(L)-40/-50/-60
4M x 16 EDO-DRAM
Read-Write (Read-Modify-Write) Cycle
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Row
Row
t
CSH
t
CAS
t
CRP
t
RWC
t
ASR
t
RP
t
RAS
t
RAH
t
CAH
I/O
(Outputs)
VOH
VOL
VIH
VIL
VIH
VIL
I/O
(Inputs)
OE
WE
VIH
VIL
t
ASR
Column
t
RCD
t
DH
t
RSH
t
RAD
t
CWD
t
OEH
t
RWD
t
RWL
t
WP
t
CLZ
t
RCS
t
AA
t
OEA
t
DS
t
DZC
t
CAC
t
OEZ
Valid
Data in
Data
Out
t
RAC
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“H” or “L”
t
ASC
VIH
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VIH
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RAS
UCAS
LCAS
Address
VIH
VIL
WL4
相關PDF資料 |
PDF描述 |
|---|---|
| HYB3165165BTL-60 | 4M x 16-Bit Dynamic RAM |
| HYB3166165BTL-60 | 4M x 16-Bit Dynamic RAM |
| HYB3164165TL-50 | 4M x 16-Bit Dynamic RAM |
| HYB3164165TL-60 | 4M x 16-Bit Dynamic RAM |
| HYB3164165T-60 | 4M x 16-Bit Dynamic RAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HYB3164165T | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 16-Bit Dynamic RAM |
| HYB3164165T-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 16-Bit Dynamic RAM |
| HYB3164165T-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 16-Bit Dynamic RAM |
| HYB3164165TL-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 16-Bit Dynamic RAM |
| HYB3164165TL-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 16-Bit Dynamic RAM |
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