參數(shù)資料
型號: HYB3164165BTL-60
廠商: SIEMENS A G
元件分類: DRAM
英文描述: INDUCTOR CHIP .10UH 5% 0805 SMD
中文描述: 4M X 16 EDO DRAM, 60 ns, PDSO50
封裝: 0.400 INCH, PLASTIC, TSOP2-50
文件頁數(shù): 15/29頁
文件大?。?/td> 284K
代理商: HYB3164165BTL-60
Semiconductor Group
15
HYB3164(5/6)165AT(L)-40/-50/-60
4M x 16 EDO-DRAM
Write Cycle (Early Write)
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RAS
UCAS
LCAS
Address
WE
OE
I/O
(Inputs)
I/O
(Outputs)
VIH
VIL
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VIL
VIH
VIL
VIH
VIL
VIH
VIL
VIH
VIL
VOH
VOL
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t
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t
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t
ASC
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Valid Data In
t
DS
t
DH
Hi Z
Column
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Row
Row
t
RAH
t
WCS
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AAA
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AAA
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“H” or “L”
WL2
相關(guān)PDF資料
PDF描述
HYB3165165BTL-60 4M x 16-Bit Dynamic RAM
HYB3166165BTL-60 4M x 16-Bit Dynamic RAM
HYB3164165TL-50 4M x 16-Bit Dynamic RAM
HYB3164165TL-60 4M x 16-Bit Dynamic RAM
HYB3164165T-60 4M x 16-Bit Dynamic RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB3164165T 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 16-Bit Dynamic RAM
HYB3164165T-50 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 16-Bit Dynamic RAM
HYB3164165T-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 16-Bit Dynamic RAM
HYB3164165TL-50 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 16-Bit Dynamic RAM
HYB3164165TL-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 16-Bit Dynamic RAM