參數(shù)資料
型號: HYB3164(5)400ATL
廠商: SIEMENS AG
元件分類: 運動控制電子
英文描述: High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD -40 to 85
中文描述: 16米x 4位動態(tài)隨機(jī)存儲器
文件頁數(shù): 9/26頁
文件大小: 246K
代理商: HYB3164(5)400ATL
Semiconductor Group
9
HYB3164(5)400AJ/AT(L)-40/-50/-60
16M x 4-DRAM
AC Characteristics
(note: 6,7,8)
AC64-2F
T
A
= 0 to 70 °C,
V
CC
= 3.3
±
0.3V
Parameter
Symbol
-40
-50
-60
Unit
Note
min.
max. min.
max. min.
max.
Common Parameters
Random read or write cycle time
t
RC
t
RAS
t
CAS
t
RP
t
CP
t
ASR
t
RAH
t
ASC
t
CAH
t
RCD
t
RAD
t
RSH
t
CSH
t
CRP
t
T
t
REF
t
REF
t
REF
75
90
110
ns
RAS pulse width
40
100k
50
100k
60
100k
ns
CAS pulse width
10
100k
13
100k
15
100k
ns
RAS precharge time
25
30
40
ns
CAS precharge time
10
10
10
ns
Row address setup time
0
0
0
ns
Row address hold time
Column address setup time
5
0
7
0
10
0
ns
ns
Column address hold time
5
7
10
ns
RAS to CAS delay time
15
30
17
37
20
45
ns
RAS to column address delay
10
20
12
25
15
30
ns
RAS hold time
10
13
15
ns
CAS hold time
40
50
60
ns
CAS to RAS precharge time
5
5
5
ns
Transition time (rise and fall)
1
30
1
30
1
30
ns
7
Refresh period for 8k-refresh
128
128
128
ms
Refresh period for 4k-refresh
64
64
64
ms
Refresh period for L-versions
256
256
256
ms
Read Cycle
Access time from RAS
t
RAC
t
CAC
t
AA
t
OEA
40
50
60
ns
8, 9
Access time from CAS
10
13
15
ns
8, 9
Access time from column address
20
25
30
ns
8, 10
OE access time
10
13
15
ns
8
Column address to RAS lead time
t
RAL
Read command setup time
20
0
25
0
30
0
ns
ns
t
RCS
t
RCH
t
RRH
Read command hold time
0
0
0
ns
11
Read command hold time
referenced to RAS
0
0
0
ns
11
CAS to output in low-Z
t
CLZ
0
0
0
ns
8
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