參數(shù)資料
型號: HYB3117805BSJ-50-
廠商: SIEMENS AG
英文描述: 2M x 8 - Bit Dynamic RAM 2k Refresh
中文描述: 200萬× 8 -位動態(tài)隨機存儲器2k刷新
文件頁數(shù): 1/25頁
文件大?。?/td> 258K
代理商: HYB3117805BSJ-50-
Semiconductor Group 1 1.96
2 097 152 words by 8-bit organization
0 to 70 °C operating temperature
Performance:
Single + 3.3 V (
±
0.3 V) supply
Low power dissipation
max. 432 mW active (-50 version)
max. 396 mW active (-60 version)
max. 360 mW active (-70 version)
7.2 mW standby (LV-TTL)
3.6 mW standby (CMOS)
Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh, hidden refresh,
self refresh and test mode
Hyper page mode (EDO) capability
All inputs, outputs and clocks fully TTL-compatible
2048 refresh cycles / 32 ms (2k-Refresh)
Plastic Package:
P-SOJ-28-3 400 mil
-50
-60
-70
tRAC
tCAC
tAA
tRC
tHPC
RAS access time
50
60
70
ns
CAS access time
13
15
20
ns
Access time from address
25
30
35
ns
Read/Write cycle time
84
104
124
ns
Hyper page mode (EDO)
cycle time
20
25
30
ns
2M x 8 - Bit Dynamic RAM
2k Refresh
(Hyper Page Mode- EDO)
Advanced Information
HYB3117805BSJ -50/-60/-70
相關PDF資料
PDF描述
HYB3117805BSJ-50 2M x 8-Bit Dynamic RAM 2k Refresh
HYB 3117805BSJ-50 2M*8 Bit Dynamic RAM 2k Refresh(Hyper Page Mode EDO)
HYB 3117805BSJ-60 2M×8 - Bit Dynamic RAM 2k Refresh(Hyper Page Mode EDO)
HYB 5117805BSJ-50 2M×8 - Bit Dynamic RAM 2k Refresh(Hyper Page Mode EDO)
HYB 5117805BSJ-60 2M×8 - Bit Dynamic RAM 2k Refresh(Hyper Page Mode EDO)
相關代理商/技術參數(shù)
參數(shù)描述
HYB3117805BSJ-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:2M x 8-Bit Dynamic RAM 2k Refresh
HYB3117805BSJ-70 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 EDO Page Mode DRAM
HYB3118160BSJ-50 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh
HYB3118160BSJ-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh
HYB3118160BSJ-70 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh