參數(shù)資料
型號： HYB3117800BSJ-60
廠商： SIEMENS A G
元件分類： DRAM
英文描述： 2M x 8-Bit Dynamic RAM
中文描述： 2M X 8 FAST PAGE DRAM, 60 ns, PDSO28
封裝： 0.400 INCH, PLASTIC, SOJ-28
文件頁數(shù)： 5/26頁
文件大?。?/td> 260K
代理商： HYB3117800BSJ-60
Semiconductor Group
5
HYB 3117800BSJ-50/-60/-70
2M x 8-DRAM
Absolute Maximum Ratings
Operating temperature range ............................................................................................0 to 70 °C
Storage temperature range.........................................................................................– 55 to 150 °C
Input/output voltage ...............................................................................-0.5 to min (Vcc+0.5, 4.6) V
Power supply voltage...................................................................................................-1.0V to 4.6 V
Power dissipation..................................................................................................................... 0.5 W
Data out current (short circuit) ................................................................................................ 50 mA
Note:
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage of
the device. Exposure to absolute maximum rating conditions for extended periods may affect device
reliability.
DC Characteristics
T
A
= 0 to 70 °C,
V
SS
= 0 V,
V
CC
= 3.3 V
±
0.3V,
t
T
= 5 ns
Parameter
Symbol
Limit Values
Unit Test
Condition
min.
max.
Input high voltage
V
IH
V
IL
V
OH
V
OL
V
OH
V
OL
I
I(L)
2.0
Vcc+0.5
V
1)
Input low voltage
LVTTL Output high voltage (
I
OUT
= –2 mA)
LVTTL Output low voltage (
I
OUT
= 2 mA)
CMOS Output high voltage (
I
OUT
= –100
μ
A)
CMOS Output low voltage (
I
OUT
= 100
μ
A)
Input leakage current,any input
(0 V
≤
V
IH
≤
Vcc + 0.3V, all other pins = 0 V)
Output leakage current
(DO is disabled, 0 V
≤
V
OUT
≤
Vcc + 0.3V)
Average
V
CC
supply current:
– 0.5
0.8
V
1)
2.4
–
V
1)
–
0.4
V
1)
Vcc-0.2
–
V
–
0.2
V
μ
A
)
– 10
10
1)
I
O(L)
– 10
10
μ
A
1)
-50 ns version
-60 ns version
-70 ns version
(RAS, CAS, address cycling,
t
RC
=
t
RC
min.)
Standby
V
CC
supply current (RAS = CAS =
V
IH
)
I
CC2
Average
V
CC
supply current, during RAS-only
refresh cycles:
I
CC1
–
–
–
120
110
100
mA
mA
mA
2) 3) 4)
2) 3) 4)
2) 3) 4)
–
2
mA
–
-50 ns version
-60 ns version
-70 ns version
(RAS cycling: CAS =
V
IH
,
t
RC
=
t
RC
min.)
I
CC3
–
–
–
120
110
100
mA
mA
mA
2) 4)
2) 4)
2) 4)
相關(guān)PDF資料
PDF描述
HYB3117800BSJL-50 x8 Fast Page Mode DRAM
HYB3117800BSJL-60 x8 Fast Page Mode DRAM
HYB3117800BSJL-70 x8 Fast Page Mode DRAM
HYB3117805BSJ-70 2M x 8-Bit Dynamic RAM 2k Refresh
HYB314400BJL-50 x4 Fast Page Mode DRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB3117800BSJ-70 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:2M x 8-Bit Dynamic RAM
HYB3117800BSJL-50 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Fast Page Mode DRAM
HYB3117800BSJL-60 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Fast Page Mode DRAM
HYB3117800BSJL-70 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Fast Page Mode DRAM
HYB3117805BSJ-50 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:2M x 8-Bit Dynamic RAM 2k Refresh
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