參數資料
型號: HYB3116405BJBTL-50-
廠商: SIEMENS AG
英文描述: 3.3V 4M x 4-Bit EDO-Dynamic RAM
中文描述: 3.3 4米× 4位江戶動態(tài)隨機存儲器
文件頁數: 5/26頁
文件大?。?/td> 285K
代理商: HYB3116405BJBTL-50-
Semiconductor Group
5
HYB 3116(7)405BJ/BT(L) -50/-60/-70
3.3V 4Mx4-DRAM
Block Diagram for HYB3116405
No. 2 Clock
Generator
Column
Address
Buffer(10)
Refresh
Controller
Refresh
Counter (12)
Address
Buffers(12)
Row
No. 1 Clock
Generator
&
Data in
Buffer
Data out
Buffer
Column
Decoder
Sense Amplifier
I/O Gating
Memory Array
4096x1024x4
Row
Decoder
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
A11
WE
CAS
4096
1024
x4
.
RAS
10
12
10
4
4
4
I/O1 I/O2 I/O3 I/O4
OE
12
12
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相關代理商/技術參數
參數描述
HYB3116405BT-50 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 4M x 4-Bit EDO-Dynamic RAM
HYB3116405BT-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 4M x 4-Bit EDO-Dynamic RAM
HYB3116405BT-70 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 4M x 4-Bit EDO-Dynamic RAM
HYB3116405BTL-50 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 4M x 4-Bit EDO-Dynamic RAM
HYB3116405BTL-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 4-Bit Dynamic RAM 2k & 4k Refresh