參數(shù)資料
型號(hào)： HYB3116400BT-70
廠商： SIEMENS A G
元件分類： DRAM
英文描述： 3.3V 4M x 4-Bit Dynamic RAM
中文描述： 4M X 4 FAST PAGE DRAM, 70 ns, PDSO24
文件頁數(shù)： 6/26頁
文件大?。?/td> 253K
代理商： HYB3116400BT-70
Semiconductor Group
6
HYB 3116(7)400BJ/BT(L) -50/-60/-70
3.3V 4Mx4-DRAM
Absolute Maximum Ratings
Operating temperature range ............................................................................................0 to 70 °C
Storage temperature range.........................................................................................– 55 to 150 °C
Input/output voltage ................................................................................-0.5 to min(Vcc+0.5, 4.6) V
Power supply voltage.................................................................................................- 0.5 V to 4.6 V
Power dissipation.................................................................................................................... 0.5 W
Data out current (short circuit) ................................................................................................ 50 mA
Note:
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage of
the device. Exposure to absolute maximum rating conditions for extended periods may affect device
reliability.
DC Characteristics
(values in brackets for HYB3117400)
T
A
= 0 to 70 °C,
V
SS
= 0 V,
V
CC
= 3.3 V
±
0.3 V,
t
T
= 5 ns
Parameter
Symbol
Limit Values
Unit Test
Condition
min.
max.
Input high voltage
V
IH
V
IL
V
OH
V
OL
V
OH
V
OL
I
I(L)
2.0
Vcc+0.5
V
1)
Input low voltage
TTL Output high voltage (
I
OUT
= – 2 mA)
TTL Output low voltage (
I
OUT
= 2 mA)
CMOS Output high voltage (
I
OUT
= –100 uA)
CMOS Output low voltage (
I
OUT
= 100 uA)
Input leakage current
(0 V
≤
V
IH
≤
Vcc + 0.3V, all other pins = 0 V)
Output leakage current
(DO is disabled, 0 V
≤
V
OUT
≤
Vcc + 0.3V)
Average
V
CC
supply current:
– 0.5
0.8
V
1)
2.4
–
V
1)
–
0.4
V
1)
VCC-0.2
–
V
–
0.2
V
μ
A
– 10
10
1)
I
O(L)
– 10
10
μ
A
1)
-50 ns version
-60 ns version
-70 ns version
(RAS, CAS, address cycling,
t
RC
=
t
RC
min.)
Standby
V
CC
supply current (RAS = CAS =
V
IH
)
I
CC2
I
CC1
–
–
–
100(120)
90 (110)
80 (100)
mA
mA
mA
2) 3) 4)
2) 3) 4)
2) 3) 4)
–
2
mA
–
相關(guān)PDF資料
PDF描述
HYB3117400BT-60 3.3V 4M x 4-Bit Dynamic RAM
HYB3116400BT-60 3.3V 4M x 4-Bit Dynamic RAM
HYB3116400BJBTL-50- 3.3V 4M x 4-Bit Dynamic RAM
HYB3116400BJ-60 RES 10K-OHM 5% 0.063W 200PPM THICK-FILM SMD-0402 5K/REEL-7IN-PA
HYB3116400BTL-70 RES 100K-OHM 1% 0.063W 200PPM THICK-FILM SMD-0402 10K/REEL-7IN-PA
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB3116400BTL-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 4M x 4-Bit Dynamic RAM
HYB3116400BTL-70 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 4M x 4-Bit Dynamic RAM
HYB3116405BJ-50 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 4M x 4-Bit EDO-Dynamic RAM
HYB3116405BJ-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 4-Bit Dynamic RAM 2k & 4k Refresh
HYB3116405BJ-70 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 4M x 4-Bit EDO-Dynamic RAM
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