參數資料
型號: HYB3116400BT-70
廠商: SIEMENS A G
元件分類: DRAM
英文描述: 3.3V 4M x 4-Bit Dynamic RAM
中文描述: 4M X 4 FAST PAGE DRAM, 70 ns, PDSO24
文件頁數: 24/26頁
文件大?。?/td> 253K
代理商: HYB3116400BT-70
Semiconductor Group
24
HYB 3116(7)400BJ/BT(L) -50/-60/-70
3.3V 4Mx4-DRAM
CAS-Before-RAS Refresh Counter Test Cycle
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ASC
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CP
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RAL
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t
CAC
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WRH
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OEA
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CLZ
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DZO
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OFF
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VIH
VIL
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VOH
VOL
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VIL
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VIL
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VIL
VIH
VIL
VIH
VIL
RAS
I/O
(Inputs)
OE
WE
Address
CAS
I/O
(Outputs)
I/O
(Outputs)
I/O
(Inputs)
WE
OE
Column
Row
Data Out
Data In
HI-Z
Read Cycle:
Write Cycle:
t
RRH
t
RCH
相關PDF資料
PDF描述
HYB3117400BT-60 3.3V 4M x 4-Bit Dynamic RAM
HYB3116400BT-60 3.3V 4M x 4-Bit Dynamic RAM
HYB3116400BJBTL-50- 3.3V 4M x 4-Bit Dynamic RAM
HYB3116400BJ-60 RES 10K-OHM 5% 0.063W 200PPM THICK-FILM SMD-0402 5K/REEL-7IN-PA
HYB3116400BTL-70 RES 100K-OHM 1% 0.063W 200PPM THICK-FILM SMD-0402 10K/REEL-7IN-PA
相關代理商/技術參數
參數描述
HYB3116400BTL-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 4M x 4-Bit Dynamic RAM
HYB3116400BTL-70 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 4M x 4-Bit Dynamic RAM
HYB3116405BJ-50 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 4M x 4-Bit EDO-Dynamic RAM
HYB3116405BJ-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 4-Bit Dynamic RAM 2k & 4k Refresh
HYB3116405BJ-70 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 4M x 4-Bit EDO-Dynamic RAM