參數(shù)資料
型號: HYB25D256160BCL-6
廠商: INFINEON TECHNOLOGIES AG
英文描述: 256 Mbit Double Data Rate SDRAM
中文描述: 256兆雙倍數(shù)據(jù)速率SDRAM
文件頁數(shù): 63/94頁
文件大小: 3326K
代理商: HYB25D256160BCL-6
Data Sheet
66
Rev. 1.6, 2004-12
HYB25D256[16/40/80]0C[E/C/F/T](L)
256 Mbit Double-Data-Rate SDRAM
Electrical Characteristics
4.3
Weak Strength Pull-down and Pull-up Characteristics
1. The weak pull-down
V-I curve for DDR SDRAM devices is expected, but not guaranteed, to lie within the inner
bounding lines of the
V-I curve.
2. The weak pull-up
V-I curve for DDR SDRAM devices is expected, but not guaranteed, to lie within the inner
bounding lines of the
V-I curve.
3. The full variation in driver pull-up current from minimum to maximum process, temperature, and voltage lie
within the outer bounding lines of the
V-I curve.
4. The full variation in the ratio of the maximum to minimum pull-up and pull-down current does not exceed 1.7,
for device drain to source voltages from 0.1 to 1.0.
5. The full variation in the ratio of the nominal pull-up to pull-down current should be unity
±10%, for device drain
to source voltages from 0.1 to 1.0 V.
Figure 36
Weak Strength Pull-down Characteristics
Figure 37
Weak Strength Pull-up Characteristics
0
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