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參數(shù)資料
| 型號： | HYB25D128400CT-7 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | 128 Mbit Double Data Rate SDRAM |
| 中文描述： | 128兆雙倍數(shù)據(jù)速率SDRAM |
| 文件頁數(shù)： | 10/85頁 |
| 文件大?。?/td> | 2653K |
| 代理商： | HYB25D128400CT-7 |
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asynchronous for self refresh exit. CKE must be maintained
high throughout read and write accesses. Input buffers,
excluding CK, CK and CKE are disabled during power-
down. Input buffers, excluding CKE, are disabled during self
refresh.
HYB25D128[400/800/160]C[C/E/T](L)
128 Mbit Double Data Rate SDRAM
Pin Configuration
Data Sheet
10
Rev. 1.0, 2004-04
2
Pin Configuration
The pin configuration of a DDR SDRAM is listed by function in
Table 2
(60 pins). The abbreviations used in the
Pin#/Buffer# column are explained in
Table 3
and
Table 4
respectively. The pin numbering for FBGA is depicted
in
Figure 1
and that of the TSOP package in
Figure 2
Table 2
Ball#/Pin#
Pin Configuration of DDR SDRAM
Name
Pin
Type
Clock Signals
G2, 45
CK1
Buffer
Type
Function
I
SSTL
Clock Signal
Note:CK and CK are differential clock inputs. All address and
control input signals are sampled on the crossing of the
positive edge of CK and negative edge of CK. Output (read)
data is referenced to the crossings of CK and CK (both
directions of crossing).
Complementary Clock Signal
Clock Enable
Note:CKE HIGH activates, and CKE Low deactivates, internal
clock signals and device input buffers and output drivers.
Taking CKE Low provides Precharge Power-Down and Self
Refresh operation (all banks idle), or Active Power-Down
(row Active in any bank). CKE is synchronous for power
down entry and exit, and for self refresh entry. CKE is
G3, 46
H3, 44
CK1
CKE
I
I
SSTL
SSTL
Control Signals
H7, 23
G8, 22
G7, 21
H8, 24
RAS
CAS
WE
CS
I
I
I
I
SSTL
SSTL
SSTL
SSTL
Row Address Strobe
Column Address Strobe
Write Enable
Chip Select
Note:All commands are masked when CS is registered HIGH. CS
provides for external bank selection on systems with
multiple banks. CS is considered part of the command code.
The standard pinout includes one CS pin.
Address Signals
J8, 26
J7, 27
BA0
BA1
I
I
SSTL
SSTL
Bank Address Bus 2:0
Note:BA0 and BA1 define to which bank an Active, Read, Write
or Precharge command is being applied. BA0 and BA1 also
determines if the mode register or extended mode register
is to be accessed during a MRS or EMRS cycle.
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| HYB25D128800AT-6 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:128 Mbit Double Data Rate SDRAM |
| HYB25D128800AT-7 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:128 Mbit Double Data Rate SDRAM |
| HYB25D128800AT-8 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:?128Mb (16Mx8) DDR200 (2-2-2)? |
| HYB25D128800ATL-6 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:128 Mbit Double Data Rate SDRAM |
| HYB25D128800ATL-7 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:128 Mbit Double Data Rate SDRAM |
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