參數(shù)資料
型號: HYB25D128400ATL-6
廠商: INFINEON TECHNOLOGIES AG
英文描述: 128 Mbit Double Data Rate SDRAM
中文描述: 128兆雙倍數(shù)據(jù)速率SDRAM
文件頁數(shù): 37/85頁
文件大?。?/td> 3085K
代理商: HYB25D128400ATL-6
Data Sheet
37
Rev. 1.0, 2004-04
HYB25D128[400/800/160]C[C/E/T](L)
128 Mbit Double Data Rate SDRAM
Functional Description
Figure 16
Read to Precharge: CAS Latencies (Burst Length = 4 or 8)
CAS Latency = 2
NOP
PRE
NOP
NOP
ACT
Read
CK
CK
Command
Address
DQS
DQ
DOa-n
DO a-n = data out from bank a, column n.
Cases shown are either uninterrupted bursts of 4 or interrupted bursts of 8.
3 subsequent elements of data out appear in the programmed order following DO a-n.
Shown with nominal t
AC
, t
DQSCK
, and t
DQSQ
.
Don’t Care
BA a, COL n
BA a or all
BA a, ROW
CL=2.5
CAS Latency = 2.5
NOP
PRE
NOP
NOP
ACT
Read
CK
CK
Command
Address
DQS
DQ
DOa-n
t
RP
BA a, COL n
BA a or all
BA a, ROW
CL=2
t
RP
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