參數(shù)資料
型號： HYB25D128160TG-3
廠商： INFINEON TECHNOLOGIES AG
英文描述： 122 x 32 pixel format, LED Backlight available
中文描述： 記憶譜
文件頁數(shù)： 68/85頁
文件大?。?/td> 3085K
代理商： HYB25D128160TG-3
Data Sheet
68
Rev. 1.0, 2004-04
HYB25D128[400/800/160]C[C/E/T](L)
128 Mbit Double Data Rate SDRAM
Electrical Characteristics
Active to Autoprecharge delay
t
RAP
t
RCD
or
t
RASmin
10
t
RCD
or
t
RASmin
12
t
RCD
or t
RASmin
ns
2)3)4)5)
Active bank A to Active bank B
command
Write recovery time
Auto precharge write recovery +
precharge time
Internal write to read command
delay
Exit self-refresh to non-read
command
Exit self-refresh to read
command
Average Periodic Refresh
Interval
t
RRD
—
—
15
—
ns
2)3)4)5)
t
WR
t
DAL
15
—
15
—
15
ns
t
CK
2)3)4)5)
(
t
WR
/
t
CK
) + (
t
RP
/
t
CK
)
2)3)4)5)11)
t
WTR
2
—
1
—
1
—
t
CK
2)3)4)5)
t
XSNR
75
—
75
—
75
—
ns
2)3)4)5)
t
XSRD
200
—
200
—
200
—
t
CK
2)3)4)5)
t
REFI
—
15.6
—
15.6
—
15.6
μ
s
2)3)4)5)12)
1) 0
°
C
≤
T
A
≤
70
°
C
; V
DDQ
= 2.5 V
±
0.2 V,
V
DD
= +2.5 V
±
0.2 V (DDR333);
V
DDQ
= 2.6 V
±
0.1 V,
V
DD
= +2.6 V
±
0.1 V
(DDR400)
2) Input slew rate
≥
1 V/ns for DDR400, DDR333
3) The CK/CK input reference level (for timing reference to CK/CK) is the point at which CK and CK cross: the input reference
level for signals other than CK/CK, is
V
REF
. CK/CK slew rate are
≥
1.0 V/ns.
4) Inputs are not recognized as valid until
V
REF
stabilizes.
5) The Output timing reference level, as measured at the timing reference point indicated in AC Characteristics (note 3) is
V
TT
.
6) These parameters guarantee device timing, but they are not necessarily tested on each device.
7)
t
HZ
and
t
LZ
transitions occur in the same access time windows as valid data transitions. These parameters are not referred
to a specific voltage level, but specify when the device is no longer driving (HZ), or begins driving (LZ).
8) The specific requirement is that DQS be valid (HIGH, LOW, or some point on a valid transition) on or before this CK edge.
A valid transition is defined as monotonic and meeting the input slew rate specifications of the device. When no writes were
previously in progress on the bus, DQS will be transitioning from Hi-Z to logic LOW. If a previous write was in progress,
DQS could be HIGH, LOW, or transitioning from HIGH to LOW at this time, depending on
t
DQSS
.
9) The maximum limit for this parameter is not a device limit. The device operates with a greater value for this parameter, but
system performance (bus turnaround) degrades accordingly.
10) Fast slew rate
≥
1.0 V/ns , slow slew rate
≥
0.5 V/ns and < 1 V/ns for command/address and CK & CK slew rate > 1.0 V/
ns, measured between
V
IH(ac)
and
V
IL(ac)
.
11) For each of the terms, if not already an integer, round to the next highest integer.
t
CK
is equal to the actual system clock
cycle time.
12) A maximum of eight Autorefresh commands can be posted to any given DDR SDRAM device.
Table 19
Parameter
AC Timing - Absolute Specifications for PC3200, PC2700 and PC2100
Symbol –5
DDR400B
Min.
–6
–7
Unit
Note/ Test
Condition
1)
DDR333
Min.
DDR266A
Min.
Max.
Max.
Max.
相關(guān)PDF資料
PDF描述
HYB25D128160TT-3 150 x 32 pixel format, LED Backlight available
HYB25D128323CL-3.6 128 Mbit DDR SGRAM
HYB25D128323CL-4.5 128 Mbit DDR SGRAM
HYB25D128323CL3.6 128 Mbit DDR SGRAM
HYB25D128323C-3.3 128 Mbit DDR SGRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB25D128160TG-37 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:MEMORY SPECTRUM
HYB25D128160TG-5 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:MEMORY SPECTRUM
HYB25D128160TG-7 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:MEMORY SPECTRUM
HYB25D128160TG-75 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:MEMORY SPECTRUM
HYB25D128160TG-7F 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:MEMORY SPECTRUM
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報(bào)價(jià)

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*