參數(shù)資料
型號： HYB25D128160TCL-75
廠商： INFINEON TECHNOLOGIES AG
英文描述： MEMORY SPECTRUM
中文描述： 記憶譜
文件頁數(shù)： 51/85頁
文件大小： 3085K
代理商： HYB25D128160TCL-75
Data Sheet
51
Rev. 1.0, 2004-04
HYB25D128[400/800/160]C[C/E/T](L)
128 Mbit Double Data Rate SDRAM
Functional Description
Figure 29
Write to Precharge: Nominal DQSS (2-bit Write), Interrupting (Burst Length = 4 or 8)
DI a-b = Data In for bank a, column b.
An interrupted burst is shown, 2 data elements are written.
1 subsequent element of data in is applied in the programmed order following DI a-b.
t
WR
is referenced from the first positive CK edge after the last desired data in pair.
The Precharge command masks the last 2 data elements in the burst.
A10 is Low with the Write command (Auto Precharge is disabled).
1 = Can be don't care for programmed burst length of 4.
2 = For programmed burst length of 4, DQS becomes don't care at this point.
3 = These bits are incorrectly written into the memory array if DM is low.
Don’t Care
T1
T2
T3
T4
T5
T6
NOP
NOP
NOP
PRE
Write
NOP
CK
CK
Command
Address
BA a, COL b
BA (a or all)
t
RP
t
DQSS
(nom)
DI a-b
1
2
DQS
DQ
DM
1
t
WR
3
3
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