參數(shù)資料
型號: HYB25D128160TC-6
廠商: INFINEON TECHNOLOGIES AG
英文描述: MEMORY SPECTRUM
中文描述: 記憶譜
文件頁數(shù): 43/85頁
文件大小: 3085K
代理商: HYB25D128160TC-6
Data Sheet
43
Rev. 1.0, 2004-04
HYB25D128[400/800/160]C[C/E/T](L)
128 Mbit Double Data Rate SDRAM
Functional Description
Figure 21
Random Write Cycles (Burst Length = 2, 4 or 8)
T1
T2
T3
T4
T5
t
DQSS
(max)
Maximum DQSS
Write
Write
Write
Write
Write
DI a-b
DI a-n
DI a-b, etc. = data in for bank a, column b, etc.
b', etc. = odd or even complement of b, etc. (i.e., column address LSB inverted).
Each Write command may be to any bank.
DI a-b’
DI a-x
DI a-x’
DI a-n’
DI a-a
DI a-a’
CK
CK
Command
Address
DQS
DQ
DM
Don’t Care
BAa, COL b
BAa, COL x
BAa, COL n
BAa, COL a
BAa, COL g
T1
T2
T3
T4
T5
Minimum DQSS
Write
Write
Write
Write
Write
DI a-b
DI a-n
DI a-b’
DI a-x
DI a-x’
DI a-n’
DI a-a
DI a-a’
CK
CK
Command
Address
DQS
DQ
DM
BAa, COL b
BAa, COL x
BAa, COL n
BAa, COL a
BAa, COL g
t
DQSS
(min)
DI a-g
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