參數(shù)資料
型號(hào): HYB25D128160TC-6
廠商: INFINEON TECHNOLOGIES AG
英文描述: MEMORY SPECTRUM
中文描述: 記憶譜
文件頁數(shù): 42/85頁
文件大?。?/td> 3085K
代理商: HYB25D128160TC-6
HYB25D128[400/800/160]C[C/E/T](L)
128 Mbit Double Data Rate SDRAM
Functional Description
Data Sheet
42
Rev. 1.0, 2004-04
Figure 20
Write to Write: Max. DQSS, Non-Consecutive (Burst Length = 4)
T1
T2
T3
T4
T5
t
DQSS
(max)
NOP
NOP
Write
NOP
Write
DI a-b, etc. = data in for bank a, column b, etc.
3 subsequent elements of data in are applied in the programmed order following DI a-b.
3 subsequent elements of data in are applied in the programmed order following DI a-n.
A non-interrupted burst is shown.
Each Write command may be to any bank.
CK
CK
Command
Address
DQS
DQ
DM
Don’t Care
BAa, COL b
BAa, COL n
DI a-b
DI a-n
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