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參數(shù)資料
| 型號： | HY62KF16403E |
| 英文描述： | x16|2.7~3.6V|55/70|Super Low Power Slow SRAM - 4M |
| 中文描述： | x16 | 2.7?3.6V的| 55/70 |超級低功耗SRAM的速度慢- 4分 |
| 文件頁數(shù)： | 3/10頁 |
| 文件大小： | 152K |
| 代理商： | HY62KF16403E |
HY62KF08401C Series
Rev.01 / Jun.01
2
DESCRIPTION
The HY62KF08401C is a high speed, super low
power and 4Mbit full CMOS SRAM organized as
512K words by 8bits. The HY62KF08401C uses
high performance full CMOS process technology
and is designed for high speed and low power
circuit technology. It is particularly well-suited for
the high density low power system application.
This device has a data retention mode that
guarantees data to remain valid at a minimum
power supply voltage of 1.2V.
FEATURES
Fully static operation and Tri-state output
TTL compatible inputs and outputs
Battery backup
-. 1.2V(min) data retention
Standard pin configuration
-. 32 - sTSOP - 8X13.4(Standard)
Standby
Current(uA)
Product No.
Voltage
(V)
Speed (ns)
Operation
Current/Icc(mA)
LL
SL
Temperature
(
°C)
HY62KF08401C-I
2.7~3.6
55/70
5
15
6
-40~85
Note 1. I : Industrial
2. Current value is max.
PIN CONNECTION
BLOCK DIAGRAM
PIN DESCRIPTION
Pin Name
Pin Function
Pin Name
Pin Function
/CS
Chip Select
I/O1 ~ I/O8
Data Input/Output
/WE
Write Enable
Vcc
Power (2.7~3.6V)
/OE
Output Enable
Vss
Ground
A0 ~ A18
Address Input
MEMORY ARRAY
512K x 8
ROW
DECODER
SENSE
AMP
WRITE
DRIVER
DATA
I/O
BUFFER
COLUMN
DECODER
BLOCK
DECODER
PRE
DECODER
ADD
INPUT
BUFFER
A0
A18
/OE
/WE
/CS
I/O1
I/O8
/OE
A10
/CS
I/O8
I/O7
I/O6
I/O5
I/O4
VSS
I/O3
I/O2
I/O1
A0
A1
A2
A3
A11
A9
A8
A13
/WE
A18
A15
VCC
A17
A16
A14
A12
A7
A6
A5
A4
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
/OE
A10
/CS
I/O8
I/O7
I/O6
I/O5
I/O4
VSS
I/O3
I/O2
I/O1
A0
A1
A2
A3
A11
A9
A8
A13
/WE
A18
A15
VCC
A17
A16
A14
A12
A7
A6
A5
A4
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32-sTSOP Forward
相關PDF資料 |
PDF描述 |
|---|---|
| HY62QF16200ALLF-I-10 | 128K X 16 STANDARD SRAM, 100 ns, PBGA48 |
| HY62QF8400SLM-12 | 512K X 8 STANDARD SRAM, 120 ns, PBGA48 |
| HY62SF8400LLM-12I | 512K X 8 STANDARD SRAM, 120 ns, PBGA48 |
| HY62SF16403ALLM-10 | x16 SRAM |
| HY62SF16403ALLM-10I | x16 SRAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HY62KT08081E | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:32Kx8bit CMOS SRAM |
| HY62KT08081E-DG10C | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:x8 SRAM |
| HY62KT08081E-DG10E | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:x8 SRAM |
| HY62KT08081E-DG10I | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:x8 SRAM |
| HY62KT08081E-DG70C | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:x8 SRAM |
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