參數(shù)資料
型號(hào): HY5DU28422DT-X
廠商: Hynix Semiconductor Inc.
英文描述: 128Mb-S DDR SDRAM
中文描述: 128Mb的- ? DDR SDRAM內(nèi)存
文件頁(yè)數(shù): 13/33頁(yè)
文件大?。?/td> 413K
代理商: HY5DU28422DT-X
Rev. 0.0 / Apr. 2003 13
HY5DU28422D(L)T
HY5DU28822D(L)T
HY5DU281622D(L)T
OPERATION COMMAND TRUTH TABLE-III
Current
State
/CS
/RAS
/CAS
/WE
Address
Command
Action
ROW
ACTIVATING
H
X
X
X
X
DSEL
NOP - Enter ROW ACT after tRCD
L
H
H
H
X
NOP
NOP - Enter ROW ACT after tRCD
L
H
H
L
X
BST
ILLEGAL
4
L
H
L
H
BA, CA, AP
READ/READAP
ILLEGAL
4,10
L
H
L
L
BA, CA, AP
WRITE/WRITEAP
ILLEGAL
4,10
L
L
H
H
BA, RA
ACT
ILLEGAL
4,9,10
L
L
H
L
BA, AP
PRE/PALL
ILLEGAL
4,10
L
L
L
H
X
AREF/SREF
ILLEGAL
11
L
L
L
L
OPCODE
MRS
ILLEGAL
11
WRITE
RECOVERING
H
X
X
X
X
DSEL
NOP - Enter ROW ACT after tWR
L
H
H
H
X
NOP
NOP - Enter ROW ACT after tWR
L
H
H
L
X
BST
ILLEGAL
4
L
H
L
H
BA, CA, AP
READ/READAP
ILLEGAL
L
H
L
L
BA, CA, AP
WRITE/WRITEAP
ILLEGAL
L
L
H
H
BA, RA
ACT
ILLEGAL
4,10
L
L
H
L
BA, AP
PRE/PALL
ILLEGAL
4,11
L
L
L
H
X
AREF/SREF
ILLEGAL
11
L
L
L
L
OPCODE
MRS
ILLEGAL
11
WRITE
RECOVERING
WITH
AUTOPRE-
CHARGE
H
X
X
X
X
DSEL
NOP - Enter precharge after tDPL
L
H
H
H
X
NOP
NOP - Enter precharge after tDPL
L
H
H
L
X
BST
ILLEGAL
4
L
H
L
H
BA, CA, AP
READ/READAP
ILLEGAL
4,8,10
L
H
L
L
BA, CA, AP
WRITE/WRITEAP
ILLEGAL
4,10
L
L
H
H
BA, RA
ACT
ILLEGAL
4,10
L
L
H
L
BA, AP
PRE/PALL
ILLEGAL
4,11
L
L
L
H
X
AREF/SREF
ILLEGAL
11
L
L
L
L
OPCODE
MRS
ILLEGAL
11
REFRESHING
H
X
X
X
X
DSEL
NOP - Enter IDLE after tRC
L
H
H
H
X
NOP
NOP - Enter IDLE after tRC
L
H
H
L
X
BST
ILLEGAL
11
L
H
L
H
BA, CA, AP
READ/READAP
ILLEGAL
11
相關(guān)PDF資料
PDF描述
HY5DU28822DLT-X 128Mb-S DDR SDRAM
HY5DU28822DT-X 128Mb-S DDR SDRAM
HY5DU281622ET 128M(8Mx16) GDDR SDRAM
HY5DU281622ET-25 128M(8Mx16) GDDR SDRAM
HY5DU281622ET-26 128M(8Mx16) GDDR SDRAM
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