參數(shù)資料
型號: HY5DU28422BT-X
廠商: Hynix Semiconductor Inc.
英文描述: 128M-S DDR SDRAM
中文描述: 128M的,擰DDR SDRAM內(nèi)存
文件頁數(shù): 11/33頁
文件大?。?/td> 343K
代理商: HY5DU28422BT-X
HY5DU28422B(L)T
HY5DU28822B(L)T
Rev. 0.3/May. 02
11
OPERATION COMMAND TRUTH TABLE-II
Current
State
/CS
/RAS
/CAS
/WE
Address
Command
Action
WRITE
L
L
H
H
BA, RA
ACT
ILLEGAL
4
L
L
H
L
BA, AP
PRE/PALL
Term burst, precharge
L
L
L
H
X
AREF/SREF
ILLEGAL
11
L
L
L
L
OPCODE
MRS
ILLEGAL
11
READ
WITH
AUTOPRE-
CHARGE
H
X
X
X
X
DSEL
Continue burst to end
L
H
H
H
X
NOP
Continue burst to end
L
H
H
L
X
BST
ILLEGAL
L
H
L
H
BA, CA, AP
READ/READAP
ILLEGAL
10
L
H
L
L
BA, CA, AP
WRITE/WRITEAP
ILLEGAL
10
L
L
H
H
BA, RA
ACT
ILLEGAL
4,10
L
L
H
L
BA, AP
PRE/PALL
ILLEGAL
4,10
L
L
L
H
X
AREF/SREF
ILLEGAL
11
L
L
L
L
OPCODE
MRS
ILLEGAL
11
WRITE
AUTOPRE-
CHARGE
H
X
X
X
X
DSEL
Continue burst to end
L
H
H
H
X
NOP
Continue burst to end
L
H
H
L
X
BST
ILLEGAL
L
H
L
H
BA, CA, AP
READ/READAP
ILLEGAL
10
L
H
L
L
BA, CA, AP
WRITE/WRITEAP
ILLEGAL
10
L
L
H
H
BA, RA
ACT
ILLEGAL
4,10
L
L
H
L
BA, AP
PRE/PALL
ILLEGAL
4,10
L
L
L
H
X
AREF/SREF
ILLEGAL
11
L
L
L
L
OPCODE
MRS
ILLEGAL
11
PRE-
CHARGE
H
X
X
X
X
DSEL
NOP-Enter IDLE after tRP
L
H
H
H
X
NOP
NOP-Enter IDLE after tRP
L
H
H
L
X
BST
ILLEGAL
4
L
H
L
H
BA, CA, AP
READ/READAP
ILLEGAL
4,10
L
H
L
L
BA, CA, AP
WRITE/WRITEAP
ILLEGAL
4,10
L
L
H
H
BA, RA
ACT
ILLEGAL
4,10
L
L
H
L
BA, AP
PRE/PALL
NOP-Enter IDLE after tRP
L
L
L
H
X
AREF/SREF
ILLEGAL
11
L
L
L
L
OPCODE
MRS
ILLEGAL
11
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HY5DU28822BLT-X 128M-S DDR SDRAM
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