參數(shù)資料
型號(hào)： HY5DU281622ET
廠商： Hynix Semiconductor Inc.
英文描述： 128M(8Mx16) GDDR SDRAM
中文描述： 128M的（8M × 16位）GDDR SDRAM內(nèi)存
文件頁(yè)數(shù)： 21/34頁(yè)
文件大?。?/td> 379K
代理商： HY5DU281622ET
Rev. 0.5 / Jan. 2005
21
HY5DU281622ET
ABSOLUTE MAXIMUM RATINGS
Note :
Operation at above absolute maximum rating can adversely affect device reliability
DC OPERATING CONDITIONS
(TA=0 to 70
o
C, Voltage referenced to V
SS
= 0V)
Note :
1. V
DDQ
must not exceed the level of V
DD
.
2. VREF is expected to be equal to 0.5*VDDQ of the transmitting device, and to track variations in the DC level of the same.
Peak to peak noise on VREF may not exceed ± 2% of the DC value.
3. VTT is expected to be set equal to VREF, and Vtt of the transmitting device must track VREF of the receiving device.
4. Supports 275/ 250/ 200/166Mhz
5. Supports 400/375/350/333/300Mhz
DC CHARACTERISTICS I
(TA=0 to 70
o
C, Voltage referenced to V
SS
= 0V)
Note
:
1. V
IN
= 0 to 3.6V, All other pins are not tested under V
IN
=0V.
2. D
OUT
is disabled, V
OUT
=0 to 2.625V, It means, output logic high voltage and low voltage is depend on output channel conditions.
Parameter
Symbol
Rating
Unit
Ambient Temperature
T
A
0 ~ 70
o
C
Storage Temperature
T
STG
-55 ~ 125
o
C
Voltage on Any Pin relative to V
SS
V
IN
, V
OUT
-0.5 ~ 3.6
V
Voltage on V
DD
relative to V
SS
V
DD
-0.5 ~ 3.6
V
Voltage on V
DDQ
relative to V
SS
V
DDQ
-0.5 ~ 3.6
V
Output Short Circuit Current
I
OS
50
mA
Power Dissipation
P
D
2
W
Soldering Temperature
Time
T
SOLDER
260
10
o
C
sec
Parameter
Symbol
Min
Typ
Max
Unit
Note
Power Supply Voltage
V
DD
V
DDQ
V
DD
V
DDQ
2.375
2.375
2.7
2.7
2.5
2.5
2.8
2.8
2.625
2.625
2.9
2.9
V
V
V
V
1,4
1,4
1,5
1,5
Input High Voltage
V
IH
V
REF
+ 0.15
-
V
DDQ
+ 0.3
V
Input Low Voltage
V
IL
-0.3
-
V
REF
- 0.15
V
Termination Voltage
V
TT
V
REF
- 0.04
V
REF
V
REF
+ 0.04
V
3
Reference Voltage
V
REF
0.49*V
DDQ
0.5*V
DDQ
0.51*V
DDQ
V
2
Parameter
Symbol
Min
Max
Unit
Note
Input Leakage Current
I
LI
-5
5
uA
1
Output Leakage Current
I
LO
-5
5
uA
2
Output High Voltage
V
OH
V
TT
+ 0.76
-
V
I
OH
= -15.2mA,2
Output Low Voltage
V
OL
-
V
TT
- 0.76
V
I
OL
= +15.2mA,2
相關(guān)PDF資料
PDF描述
HY5DU281622ET-25 128M(8Mx16) GDDR SDRAM
HY5DU281622ET-26 128M(8Mx16) GDDR SDRAM
HY5DU281622ET-28 128M(8Mx16) GDDR SDRAM
HY5DU281622ET-30 128M(8Mx16) GDDR SDRAM
HY5DU281622ET-33 128M(8Mx16) GDDR SDRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HY5DU281622ET-25 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128M(8Mx16) GDDR SDRAM
HY5DU281622ET-26 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128M(8Mx16) GDDR SDRAM
HY5DU281622ET-28 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128M(8Mx16) GDDR SDRAM
HY5DU281622ET-30 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128M(8Mx16) GDDR SDRAM
HY5DU281622ET-33 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128M(8Mx16) GDDR SDRAM
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