參數(shù)資料
型號: HY51V65163HGJ-6
廠商: HYNIX SEMICONDUCTOR INC
元件分類: DRAM
英文描述: 4M x 16Bit EDO DRAM
中文描述: 4M X 16 EDO DRAM, 60 ns, PDSO50
封裝: 0.400 INCH, PLASTIC, SOJ-50
文件頁數(shù): 6/11頁
文件大小: 96K
代理商: HY51V65163HGJ-6
HY51V(S)65163HG/HGL
Rev.0.1/Apr.01
6
- continued -
Read Cycles
Parameter
Symbol
-45
-50
-60
Unit
Note
Min
Max
Min
Max
Min
Max
/OE to Din delay time
t
ODD
12
-
13
-
15
-
ns
5
/OE delay time from Din
t
DZO
0
-
0
-
0
-
ns
6
/CAS delay time from Din
tDZC
0
-
0
-
0
-
ns
6
Transition time ( Rise and Fall)
t
T
2
50
2
50
2
50
ns
7
Refresh period
t
REF
-
64
-
64
-
64
ms
4K Ref.
Refresh period (L-version)
-
128
-
128
-
128
ms
4K Ref.
Parameter
Symbol
-45
-50
-60
Unit
Note
Min
Max
Min
Max
Min
Max
Access time from /RAS
t
RAC
-
45
-
50
-
60
ns
8, 9
Access time from /CAS
t
CAC
-
12
-
13
-
15
ns
9,10,17
Access time from column address
tAA
-
23
-
25
-
30
ns
9,11,17
Access time from /OE
t
OAC
-
12
-
13
-
15
ns
9
Read command set-up time
t
RCS
0
-
0
-
0
-
ns
21
Read command hold time to /CAS
tRCH
0
-
0
-
0
-
ns
12,22
Read command hold time to /RAS
t
RRH
0
-
0
-
0
-
ns
12
Column address to /RAS lead time
t
RAL
23
-
25
-
30
-
ns
Column address to /CAS lead time
tCAL
15
-
15
-
18
-
ns
Output buffer turn off delay time from /CAS
t
OFF
-
12
-
13
-
15
ns
13,26
Output buffer turn off delay time from /OE
t
OEZ
-
12
-
13
-
15
ns
13
/CAS to Din delay time
tCDD
12
-
13
-
15
-
ns
5
/RAS to Din delay time
t
RDD
12
-
13
-
15
-
ns
/WE to Din delay time
t
WDD
12
-
13
-
15
-
ns
Output buffer turn off delay time from /RAS
tOFR
-
12
-
13
-
15
ns
13,26
Output buffer turn off delay time from /WE
t
WEZ
-
12
-
13
-
15
ns
13
Output data hold time
t
OH
3
-
3
-
3
-
ns
26
Output data hold time from /RAS
tOHR
3
-
3
-
3
-
ns
26
Read command hold time from /RAS
t
RCHR
45
-
50
-
60
-
ns
Output data hold time from /OE
t
OHO
3
-
3
-
3
-
ns
/CAS to output in low-Z
tCLZ
0
-
0
-
0
-
ns
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