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參數(shù)資料
| 型號： | HY51V65163HGJ-5 |
| 廠商： | HYNIX SEMICONDUCTOR INC |
| 元件分類： | DRAM |
| 英文描述： | 4M x 16Bit EDO DRAM |
| 中文描述： | 4M X 16 EDO DRAM, 50 ns, PDSO50 |
| 封裝： | 0.400 INCH, PLASTIC, SOJ-50 |
| 文件頁數(shù)： | 3/11頁 |
| 文件大小： | 96K |
| 代理商： | HY51V65163HGJ-5 |
HY51V(S)65163HG/HGL
Rev.0.1/Apr.01
3
ABSOLUTE MAXIMUM RATINGS
Note :
Operation at above absolute maximum rating can adversely affect device reliability.
Recommended DC OPERATING CONDITIONS
(TA=0 to 70
o
C)
Note : All voltages are referenced to Vss
1. 6.0V at pulse width 10ns which is measured at Vcc
2. -0.1V at pulse width 10ns which is measured at Vss
Parameter
Symbol
Rating
Unit
Ambient Temperature
T
A
0 ~ 70
o
C
Storage Temperature
T
STG
-55 ~ 125
o
C
Voltage on Any Pin relative to V
ss
V
T
-0.5 ~ Vcc + 0.5
(Max 4.6V)
V
Voltage on V
cc
relative to V
ss
V
cc
-0.5 ~ 4.6
V
Short Circuit Output Current
I
OUT
50
mA
Power Dissipation
P
T
1
W
Parameter
Symbol
Min
Typ.
Max
Unit
Note
Power Supply Voltage
V
cc
3.0
3.3
3.6
V
1,2
Power Supply Voltage
V
ss
0
0
0
V
2
Input High Voltage
V
IH
2.0
-
V
cc
+ 0.3
V
1
Input Low Voltage
V
IL
-0.3
-
0.8
V
1
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