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參數(shù)資料
| 型號(hào)： | HY51V65163HG |
| 廠商： | Hynix Semiconductor Inc. |
| 英文描述： | Contact Conditioner; Dispensing Method:Bottle; Trade Name, Chemical:DeoxIT Gold; Volume:59ml RoHS Compliant: Yes |
| 中文描述： | 4米× 16 EDO公司的DRAM |
| 文件頁(yè)數(shù)： | 8/11頁(yè) |
| 文件大?。?/td> | 96K |
| 代理商： | HY51V65163HG |
HY51V(S)65163HG/HGL
Rev 0.1 / Apr. 01
Extended Data Out Mode Cycles
EDO Page Mode Read-Modify-Write Cycle
Self Refresh Cycle (L-Version)
Parameter
Symbol
-45
-50
-60
Unit
Note
Min
Max
Min
Max
Min
Max
EDO page mode cyle time
tHPC
17
-
20
-
25
-
ns
25
Write pulse width during /CAS precharge
tWPE
7
-
8
-
10
-
ns
EDO mode /RAS pulse width
tRASP
-
100K
-
100K
-
100K
ns
16
Access time from /CAS precharge
tACP
-
28
-
28
-
35
ns
9,17,22
/RAS hold time from /CAS precharge
tRHCP
26
-
28
-
35
-
ns
/CAS hold time referred /OE
tCOL
7
-
8
-
10
-
ns
/CAS to /OE set-up time
tCOP
5
-
5
-
5
-
ns
Read command hold time
from /CAS precharge
tRCHP
26
-
28
-
35
-
ns
Output data hold time from /CAS low
tDOH
3
-
3
-
3
-
ns
9,27
/OE precharge time
tOEP
7
-
8
-
10
-
ns
Parameter
Symbol
-45
-50
-60
Unit
Note
Min
Max
Min
Max
Min
Max
EDO read-modify-write cycle time
tHPRWC
57
-
57
-
68
-
ns
EDO page mode read-modify-write cycle
/CAS precharge to /WE delay time
tCPW
45
-
45
-
54
-
ns
14,22
Parameter
Symbol
-45
-50
-60
Unit
Note
Min
Max
Min
Max
Min
Max
/RAS pulse width ( self refresh)
tRASS
100
-
100
-
100
-
us
31
/RAS precharge time ( self refresh)
tRPS
90
-
90
-
110
-
ns
31
/CAS hold time ( self refresh)
tCHS
-50
-
-50
-
-50
-
ns
23
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HY51V65163HGJ-45 | 4M x 16Bit EDO DRAM |
| HY51V65163HGJ-5 | 4M x 16Bit EDO DRAM |
| HY51V65163HGJ-6 | 4M x 16Bit EDO DRAM |
| HY51V65163HGT-45 | Contact Conditioner; Dispensing Method:Spray; Trade Name, Chemical:DeoxIT Gold; Volume:25ml; Weight:163g; Size:163 g RoHS Compliant: Yes |
| HY51V65163HGT-5 | 4M x 16Bit EDO DRAM |
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