參數(shù)資料
型號： HY29LV400BT90I
廠商： Hynix Semiconductor Inc.
英文描述： 4 Mbit (512K x 8/256K x 16) Low Voltage Flash Memory
中文描述： 4兆位（為512k × 8/256K × 16）低壓快閃記憶體
文件頁數(shù)： 6/40頁
文件大?。?/td> 564K
代理商： HY29LV400BT90I
6
Rev. 1.0/Nov. 01
HY29LV400
Table 2. HY29LV400B (Bottom Boot Block) Memory Array Organization
Table 1. HY29LV400T (Top Boot Block) Memory Array Organization
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1
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0
3
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2
3
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1
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3
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-
0
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3
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1
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1
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4
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4
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Notes:
1.
‘
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indicates don
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2.
‘
0xN. . . N
’
indicates an address in hexadecimal notation.
3. The address range in byte mode is A[17:0, -1]. The address range in word mode is A[17:0].
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4
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0
0
0
0
2
x
0
8
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2
3
6
1
0
1
X
X
X
F
F
F
F
5
x
0
-
0
0
0
0
5
x
0
F
F
F
F
2
x
0
-
0
0
0
8
2
x
0
9
S
2
3
6
1
1
0
X
X
X
F
F
F
F
6
x
0
-
0
0
0
0
6
x
0
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F
F
7
3
x
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-
0
0
0
0
3
x
0
0
1
S
2
3
6
1
1
1
X
X
X
F
F
F
F
7
x
0
-
0
0
0
0
7
x
0
F
F
F
F
3
x
0
-
0
0
0
8
3
x
0
Notes:
1.
‘
X
’
indicates don
’
t care.
2.
‘
0xN. . . N
’
indicates an address in hexadecimal notation.
3. The address range in byte mode is A[17:0, -1]. The address range in word mode is A[17:0].
相關PDF資料
PDF描述
HY29LV400TF55 4 Mbit (512K x 8/256K x 16) Low Voltage Flash Memory
HY29LV400TF55I 4 Mbit (512K x 8/256K x 16) Low Voltage Flash Memory
HY29LV400TF70 4 Mbit (512K x 8/256K x 16) Low Voltage Flash Memory
HY29LV400TF70I 4 Mbit (512K x 8/256K x 16) Low Voltage Flash Memory
HY29LV400TF90 4 Mbit (512K x 8/256K x 16) Low Voltage Flash Memory
相關代理商/技術參數(shù)
參數(shù)描述
HY29LV400TF55 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Mbit (512K x 8/256K x 16) Low Voltage Flash Memory
HY29LV400TF55I 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Mbit (512K x 8/256K x 16) Low Voltage Flash Memory
HY29LV400TF70 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Mbit (512K x 8/256K x 16) Low Voltage Flash Memory
HY29LV400TF70I 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Mbit (512K x 8/256K x 16) Low Voltage Flash Memory
HY29LV400TF90 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Mbit (512K x 8/256K x 16) Low Voltage Flash Memory
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