參數(shù)資料
型號: HY29F040A
廠商: Hynix Semiconductor Inc.
英文描述: 512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory
中文描述: 為512k × 8位CMOS 5.0伏只,扇區(qū)擦除閃存
文件頁數(shù): 2/40頁
文件大?。?/td> 282K
代理商: HY29F040A
2
HY29F040A
protect and sector unprotect features can be en-
abled in a PROM programmer.
The HY29F040A needs a single 5.0 volt power-
supply for read, program and erase operation. In-
ternally generated and well regulated voltages are
provided for program and erase operation. A low
Vcc detector inhibits write operations on loss of
power. End of program or erase is detected by /Data
Polling of DQ7 or by the Toggle Bit feature on DQ6.
Once program or erase cycle is successfully com-
pleted, the device internally resets to the Read
mode.
BLOCK DIAGRAM
Erase Voltage
Generator
PGM Voltage
Generator
Timer
Vcc Detector
Cell Matrix
Vcc
Vss
CE
OE
A0-A18
DQ0-DQ7
STB
WE
Y-Gating
STB
Input/Output
Buffers
State
Control
Command
Register
Chip Enable
Output Enable
Logic
Address
Latch
Y-Decoder
X-Decoder
Data Latch
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參數(shù)描述
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HY29F040AC-15 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory
HY29F040AC-15E 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory