參數資料
型號: HY27UF081G2M-TMB
廠商: Hynix Semiconductor Inc.
英文描述: Inductor; Inductor Type:Power; Inductance:2uH; Inductance Tolerance: 25 %; Series:CTX; Package/Case:PCB Surface Mount; Core Material:Amorphous Metal; Current, lt rms Parallel:7.26A; Current, lt rms Series:3.63A RoHS Compliant: Yes
中文描述: 1Gbit的(128Mx8bit / 64Mx16bit)NAND閃存
文件頁數: 20/48頁
文件大?。?/td> 476K
代理商: HY27UF081G2M-TMB
Rev 0.7 / Apr. 2005
20
Preliminary
HY27UF(08/ 16)1G2M Series
HY27SF(08/ 16)1G2M Series
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
Item
Symbol
Test Condition
Min
Max
Unit
Input / Output Capacitance (1)
C
I/O
V
IL
=0V
-
10
pF
Input Capacitance(1)
C
IN
V
IN
=0V
-
10
pF
Table 11: Pin Capacitance (TA= 25C, F= 1.0MHz)
Note:
1. For the stacked devices version the Input Capacitance is <TBD> and the I/O capacitance is <TBD>
Parameter
Symbol
Min
Typ
Max
Unit
Program Time
t
PROG
-
300
700
us
Dummy Busy Time for Cache Program
t
CBSY
-
3
700
us
Number of partial Program Cycles in the same page
Main Array
NOP
-
-
4
Cycles
Spare Array
NOP
-
-
4
Cycles
Block Erase Time
t
BERS
-
2
3
ms
Table 12: Program / Erase Characteristics
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HY27UF081G2M-TMP 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
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相關代理商/技術參數
參數描述
HY27UF081G2M-TMP 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27UF081G2M-TMS 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27UF081G2M-TPCB 制造商:SK Hynix Inc 功能描述:IC FLASH NAND 1GB SMD TSOP48 制造商:SK Hynix Inc 功能描述:NAND Flash, 128M x 8, 48 Pin, Plastic, TSSOP
HY27UF081G2M-TPCP 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27UF081G2M-TPCS 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory