參數資料
型號： HUF76113T3ST
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 功率晶體管
英文描述： 4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
中文描述： 4.7 A, 30 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： SOT-223, 4 PIN
文件頁數： 1/12頁
文件大小： 614K
代理商： HUF76113T3ST
2003 Fairchild Semiconductor Corporation
HUF76113T3ST Rev. B2
HUF76113T3ST
4.7A, 30V 0.031 Ohm
,
N-Channel, Logic
Level UltraFET Power MOSFET
This N-Channel power MOSFET is
manufactured using the innovative
UltraFET process. This advanced
process technology achieves the
lowest possible on-resistance per silicon area, resulting in
outstanding performance. This device is capable of
withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators, switching
converters, motor drivers, relay drivers, low-voltage bus
switches, and power management in portable and battery-
operated products.
Formerly developmental type TA76113.
Features
Logic Level Gate Drive
4.7A, 30V
Ultra Low On-Resistance, r
DS(ON)
= 0.031
Temperature Compensating PSPICE
Model
Temperature Compensating SABER Model
Thermal Impedance SPICE Model
Thermal Impedance SABER Model
Peak Current vs Pulse Width Curve
UIS Rating Curve
Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
SOT-223
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF76113T3ST
SOT-223
76113
NOTE: HUF76113T3ST is available only in tape and reel.
D
G
S
SOURCE
GATE
DRAIN
DRAIN
(FLANGE)
Data Sheet
June 2003
相關PDF資料
PDF描述
HUF76129D3 20A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs(20A, 30V, 0.016 Ω,N溝道,邏輯電平,UltraFET功率MOS場效應管)
HUF76129D3S 20A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs(20A, 30V, 0.016 Ω,N溝道,邏輯電平,UltraFET功率MOS場效應管)
HUF76132P3 75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
HUF76132S3S 75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
HUF76132SK8 11.5A, 30V, 0.0115 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
相關代理商/技術參數
參數描述
HUF76121D3 功能描述:MOSFET 20a 30V N-Ch Logic Level 0.023Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76121D3S 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76121D3ST 功能描述:MOSFET USE 512-FDD6612A Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76121P3 功能描述:MOSFET 47a 30V N-Ch MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76121S3 制造商:Rochester Electronics LLC 功能描述:- Bulk
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