參數(shù)資料
型號(hào)： HUF76132SK8
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi)： 功率晶體管
英文描述： 11.5A, 30V, 0.0115 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
中文描述： 11.5 A, 30 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
封裝： MS-012AA, 8 PIN
文件頁(yè)數(shù)： 1/11頁(yè)
文件大?。?/td> 287K
代理商： HUF76132SK8
2003 Fairchild Semiconductor Corporation
HUF76132P3, HUF76132S3S Rev. C1
HUF76132P3, HUF76132S3S
75A, 30V, 0.011 Ohm, N-Channel, Logic
Level UltraFET Power MOSFETs
These N-Channel power MOSFETs
are manufactured using the
innovative UltraFET process. This
advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Formerly developmental type TA76132.
Features
Logic Level Gate Drive
75A, 30V
Ultra Low On-Resistance, r
DS(ON)
= 0.011
Temperature Compensating PSPICE
Model
Temperature Compensating SABER
Model
Thermal Impedance SPICE Model
Thermal Impedance SABER Model
Peak Current vs Pulse Width Curve
UIS Rating Curve
Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF76132P3
TO-220AB
76132P
HUF76132S3S
TO-263AB
76132S
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-263AB variant in tape and reel, e.g., HUF76132S3ST.
D
G
S
JEDEC TO-220AB
JEDEC TO-263AB
DRAIN
SOURCE
GATE
DRAIN
(FLANGE)
GATE
SOURCE
DRAIN
(FLANGE)
Data Sheet
January 2003
相關(guān)PDF資料
PDF描述
HUF76137P3 30V N-Channel PowerTrench MOSFET
HUF76137S3S 30V N-Channel PowerTrench MOSFET
HUF76137P3 75A, 30V, 0.009 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
HUF76137S3S 75A, 30V, 0.009 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
HUF76139P3 75A, 30V, 0.0075 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HUF76132SK8T 功能描述:MOSFET USE 512-FDS6690A Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76137P3 功能描述:MOSFET 75a 30V 0.009 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76137S3 制造商:Harris Corporation 功能描述:
HUF76137S3S 制造商:Rochester Electronics LLC 功能描述:- Bulk
HUF76137S3ST 功能描述:MOSFET 75a 30V N-Channel Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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