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參數(shù)資料
| 型號： | HUF76107P3 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs |
| 中文描述： | 20 A, 30 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 5/10頁 |
| 文件大?。?/td> | 369K |
| 代理商： | HUF76107P3 |
74
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. SATURATION CHARACTERISTICS
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
Typical Performance Curves
Unless otherwise specified
(Continued)
0
1
2
6
0
10
20
25
I
D
V
GS
, GATE TO SOURCE VOLTAGE (V)
150
o
C
-40
o
C
25
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
30
4
5
3
15
5
V
GS
= 3.5V
V
GS
= 4V
0
1
3
4
5
6
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 5V
V
GS
= 10V
V
GS
= 3V
V
GS
= 4.5V
2
0
10
20
25
30
15
5
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
50
60
70
90
30
4
V
GS
, GATE TO SOURCE VOLTAGE (V)
2
6
10
8
I
D
= 20A
I
D
= 12A
I
D
= 5A
r
D
,
O
)
40
80
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0.50
0.75
1.00
1.25
1.75
-60
0
60
120
N
T
J
, JUNCTION TEMPERATURE (
o
C)
O
180
1.50
2.00
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 10V, I
D
= 20A
-60
0
60
120
0.6
0.8
0.9
1.1
1.2
N
T
J
, JUNCTION TEMPERATURE (
o
C)
T
V
GS
= V
DS
, I
D
= 250
μ
A
180
1.0
0.7
1.15
1.10
1.00
0.95
0.90
-60
0
60
120
T
J
, JUNCTION TEMPERATURE (
o
C)
N
B
I
D
= 250
μ
A
180
1.05
HUF76107P3
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|---|---|
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| HUF76112SK8 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:7.5A, 30V, 0.026 Ohm, N-Channel, Logic Level Power MOSFET |
| HUF76112SK8T | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 7.5A I(D) | SO |
| HUF76113DK8 | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF76113DK8T | 功能描述:MOSFET USE 512-FDS6912A Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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