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參數(shù)資料
| 型號(hào)： | HUF76107P3 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs |
| 中文描述： | 20 A, 30 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 10/10頁 |
| 文件大?。?/td> | 369K |
| 代理商： | HUF76107P3 |
79
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ISO9000
quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
http://www.intersil.com
SPICE Thermal Model
REV June1998
HUF76107
CTHERM1 th 6 5.0e-5
CTHERM2 6 5 9.0e-4
CTHERM3 5 4 1.3e-3
CTHERM4 4 3 1.3e-3
CTHERM5 3 2 2.2e-2
CTHERM6 2 tl 7.9e-3
RTHERM1 th 6 2.0e-4
RTHERM2 6 5 6.0e-3
RTHERM3 5 4 3.5e-2
RTHERM4 4 3 8.5e-1
RTHERM5 3 2 5.1e-1
RTHERM6 2 tl 1
SABER Thermal Model
SABER thermal model HUF76107
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 6 = 5.0e-5
ctherm.ctherm2 6 5 = 9.0e-4
ctherm.ctherm3 5 4 = 1.3e-3
ctherm.ctherm4 4 3 = 1.3e-3
ctherm.ctherm5 3 2 = 2.2e-2
ctherm.ctherm6 2 tl = 7.9e-3
rtherm.rtherm1 th 6 = 2.0e-4
rtherm.rtherm2 6 5 = 6.0e-3
rtherm.rtherm3 5 4 = 3.5e-2
rtherm.rtherm4 4 3 = 8.5e-1
rtherm.rtherm5 3 2 = 5.1e-1
rtherm.rtherm6 2 tl = 1
}
RTHERM4
RTHERM6
RTHERM5
RTHERM3
RTHERM2
RTHERM1
CTHERM4
CTHERM6
CTHERM5
CTHERM3
CTHERM2
CTHERM1
tl
2
3
4
5
6
th
JUNCTION
CASE
HUF76107P3
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HUF76107P3_R4782 | 功能描述:MOSFET USE 512-FDP6030BL Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF76112SK8 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:7.5A, 30V, 0.026 Ohm, N-Channel, Logic Level Power MOSFET |
| HUF76112SK8T | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 7.5A I(D) | SO |
| HUF76113DK8 | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF76113DK8T | 功能描述:MOSFET USE 512-FDS6912A Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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