參數(shù)資料
型號: HUF76107P3
廠商: HARRIS SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
中文描述: 20 A, 30 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁數(shù): 4/10頁
文件大?。?/td> 369K
代理商: HUF76107P3
73
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. PEAK CURRENT CAPABILITY
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
Typical Performance Curves
Unless otherwise specified
(Continued)
t, RECTANGULAR PULSE DURATION (s)
10
-5
10
-1
10
0
2
0.1
1
10
-2
Z
θ
J
,
T
0.01
10
-4
10
-3
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
x R
θ
JC
+ T
C
P
DM
t
1
t
2
10
1
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
T
C
= 25
o
C
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
I
=
I
25
150 - T
C
125
V
GS
= 10V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
I
D
,
500
10
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t, PULSE WIDTH (s)
100
V
GS
= 5V
T
J
= MAX RATED
T
C
= 25
C
10ms
1ms
BV
DSS MAX
= 30V
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
100
1
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
1
100
200
10
I
D
,
10
100
μ
s
1
10
100
100
0.01
200
1
I
A
,
t
AV
, TIME IN AVALANCHE (ms)
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
If R = 0
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
0.1
10
HUF76107P3
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