參數(shù)資料
型號(hào)： HUF76107P3
廠商： HARRIS SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
中文描述： 20 A, 30 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁(yè)數(shù)： 3/10頁(yè)
文件大?。?/td> 369K
代理商： HUF76107P3
72
SWITCHING SPECIFICATIONS
(V
GS
= 10V)
Turn-On Time
t
ON
V
DD
= 15V, I
D
20A, R
L
=0.75
,
V
GS
=
10V, R
GS
= 33
(Figures 16, 21, 22)
-
-
75
ns
Turn-On Delay Time
t
d(ON)
-
18
-
ns
Rise Time
t
r
-
30
-
ns
Turn-Off Delay Time
t
d(OFF)
-
62
-
ns
Fall Time
t
f
-
20
-
ns
Turn-Off Time
t
OFF
-
-
125
ns
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Q
g(TOT)
V
GS
= 0V to 10V
V
DD
= 15V,I
D
10.5A,
R
L
= 1.43
I
g(REF)
= 1.0mA
(Figures 14, 19, 20)
-
8.6
10.3
nC
Gate Charge at 5V
Q
g(5)
V
GS
= 0V to 5V
-
4.7
5.7
nC
Threshold Gate Charge
Q
g(TH)
V
GS
= 0V to 1V
-
0.35
0.42
nC
Gate to Source Gate Charge
Q
gs
-
1.00
-
nC
Gate to Drain “Miller” Charge
Q
gd
-
2.40
-
nC
CAPACITANCE SPECIFICATIONS
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V, f = 1MHz
(Figure 13)
-
315
-
pF
Output Capacitance
C
OSS
-
170
-
pF
Reverse Transfer Capacitance
C
RSS
-
30
-
pF
Electrical Specifications
T
A
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
I
SD
= 10.5A
-
-
1.25
V
Reverse Recovery Time
t
rr
I
SD
= 10.5A, dI
SD
/dt = 100A/
μ
s
-
-
39
ns
Reverse Recovered Charge
Q
RR
I
SD
= 10.5A, dI
SD
/dt = 100A/
μ
s
-
-
49
nC
Typical Performance Curves
Unless otherwise specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
T
A
, AMBIENT TEMPERATURE (
o
C)
P
0
0
25
50
75
100
150
0.2
0.4
0.6
0.8
1.0
1.2
125
10
0
25
50
75
100
125
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
25
150
5
20
V
GS
=4.5V
V
GS
=10V
15
HUF76107P3
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HUF76107P3_R4782 功能描述:MOSFET USE 512-FDP6030BL Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76112SK8 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:7.5A, 30V, 0.026 Ohm, N-Channel, Logic Level Power MOSFET
HUF76112SK8T 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 7.5A I(D) | SO
HUF76113DK8 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76113DK8T 功能描述:MOSFET USE 512-FDS6912A Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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