參數(shù)資料
型號： HUF76013P3
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 功率晶體管
英文描述： 20A, 20V, 0.022 Ohm, N-Channel, Logic Level Power MOSFETs
中文描述： 20 A, 20 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： TO-220AB, 3 PIN
文件頁數(shù)： 1/10頁
文件大小： 195K
代理商： HUF76013P3
2001 Fairchild Semiconductor Corporation
HUF76013P3, HUF76013D3S Rev. B
HUF76013P3, HUF76013D3S
20A, 20V, 0.022 Ohm, N-Channel, Logic
Level Power MOSFETs
The HUF76013 is an application-specific MOSFET
optimized for switching when used as the upper switch in
synchronous buck applications. The low gate charge and low
input capacitance results in lower driver and lower switching
losses thereby increasing the overall system efficiency.
Symbol
Packaging
Features
20A, 20V
- r
DS(ON)
= 0.022
,
V
GS
=
10V
- r
DS(ON)
= 0.030
,
V
GS
=
5V
PWM Optimized for Synchronous Buck Applications
Fast Switching
Low Gate Charge
- Q
g
Total 14nC (Typ)
Low Capacitance
- C
ISS
624pF (Typ)
- C
RSS
71pF (Typ)
HUF76013D3S
JEDEC TO-252AA
HUF76013P3
JEDEC TO-220AB
D
G
S
GATE
SOURCE
DRAIN (FLANGE)
DRAIN
(FLANGE)
GATE
SOUDRAIN
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF76013P3
TO-220AB
76013P
HUF76013D3S
TO-252AA
76013D
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the HUF76013D3S in tape and reel, e.g., HUF76013D3ST.
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
V
DSS
V
DGR
V
GS
PARAMETER
HUF76013P3,
HUF76013D3S
20
20
±
16
UNITS
V
V
V
Drain to Source Voltage (Note 1)
Drain to Gate Voltage (R
GS
= 20k
) (Note 1)
Gate to Source Voltage
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V) (Figure 2)
Continuous (T
C
= 100
o
C, V
GS
= 5V)
Pulsed Drain Current
Power Dissipation
Derate Above 25
o
C
Operating and Storage Temperature
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Techbrief TB334
I
D
I
D
I
DM
P
D
20
20
Figure 4
50
0.4
-55 to 150
A
A
A
W
W/
o
C
o
C
T
J
, T
STG
T
L
T
pkg
300
260
o
C
o
C
THERMAL SPECIFICATIONS
R
θ
JC
R
θ
JA
Thermal Resistance Junction to Case, TO-220, TO-252
Thermal Resistance Junction to Ambient TO-220
Thermal Resistance Junction to Ambient TO-252
2.5
62
100
o
C/W
o
C/W
o
C/W
NOTE:
1. T
J
= 25
o
C to 125
o
C.
CAUTION:
Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Data Sheet
December 2001
相關(guān)PDF資料
PDF描述
HUF76113SK8 6.5A, 30V, 0.030 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
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HUF76113SK8 6.5A, 30V, 0.030 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HUF76105DK8 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:5A, 30V, 0.050 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET
HUF76105DK8T 功能描述:MOSFET USE 512-FDS6930A Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76105SK8 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:5.5A, 30V, 0.050 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
HUF76105SK8T 功能描述:MOSFET 5a 30V 0.050 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76107D3 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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