- 您現(xiàn)在的位置：買賣IC網 > PDF目錄383076 > HUF75637S3S (INTERSIL CORP) 44A, 100V, 0.030 Ohm, N-Channel, UltraFET Power MOSFET PDF資料下載
參數(shù)資料
| 型號： | HUF75637S3S |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 44A, 100V, 0.030 Ohm, N-Channel, UltraFET Power MOSFET |
| 中文描述： | 44 A, 100 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 文件頁數(shù)： | 4/9頁 |
| 文件大?。?/td> | 332K |
| 代理商： | HUF75637S3S |
4
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. SATURATION CHARACTERISTICS
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
Typical Performance Curves
(Continued)
10
100
10
300
300
1
1
100
μ
s
10ms
1ms
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
T
J
= MAX RATED
T
C
= 25
o
C
SINGLE PULSE
100
10
100
300
0.001
0.01
0.1
1
I
A
,
t
AV
, TIME IN AVALANCHE (ms)
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
If R = 0
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
0
20
40
60
80
2
3
4
6
I
D
V
GS
, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
T
J
= 175
o
C
T
J
= 25
o
C
T
J
= -55
o
C
5
0
20
40
60
80
0
1
2
3
4
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
=5V
V
GS
= 20V
V
GS
= 10V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
C
V
GS
= 7V
V
GS
= 6V
0.5
1.0
1.5
2.0
3.0
-80
-40
0
40
80
120
200
N
T
J
, JUNCTION TEMPERATURE (
o
C)
O
V
GS
= 10V, I
D
= 44A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
160
2.5
0.6
0.8
1.0
1.2
-80
-40
0
40
80
120
200
N
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
= V
DS
, I
D
= 250
μ
A
T
160
HUF75637P3, HUF75637S3S
相關PDF資料 |
PDF描述 |
|---|---|
| HUF75637P3 | 44A, 100V, 0.030 Ohm, N-Channel, UltraFET Power MOSFET |
| HUF75637S3S | REPLACEMENT BLADE FOR PTS-10 |
| HUF76107P3 | 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs |
| HUF76107D3 | 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs |
| HUF76107D3S | 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HUF75637S3ST | 功能描述:MOSFET 44a 100V 0.030 Ohm N-Ch MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75639G3 | 功能描述:MOSFET 56a 100V N-Ch UltraFET .25 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75639G3 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| HUF75639G3_Q | 功能描述:MOSFET 56a 100V N-Ch UltraFET .25 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75639P3 | 功能描述:MOSFET 56a 100V N-Ch UltraFET 0.025 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復。