參數(shù)資料
型號(hào): HUF75637P3
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi): 功率晶體管
英文描述: 44A, 100V, 0.030 Ohm, N-Channel, UltraFET Power MOSFET
中文描述: 44 A, 100 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁(yè)數(shù): 5/9頁(yè)
文件大小: 332K
代理商: HUF75637P3
5
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 13. GATE CHARGE WAVEFORMS FOR CONSTANT GATE CURRENT
Test Circuits and Waveforms
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
Typical Performance Curves
(Continued)
0.9
1.0
1.1
1.2
-80
-40
0
40
80
120
200
T
J
, JUNCTION TEMPERATURE (
o
C)
N
B
I
D
= 250
μ
A
160
30
100
1000
6000
0.1
1.0
10
100
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 0V, f = 1MHz
C
ISS
=
C
GS
+ C
GD
C
RSS
=
C
GD
C
OSS
C
DS
+ C
GD
0
2
4
6
8
10
0
10
20
30
40
50
V
G
,
V
DD
= 50V
Q
g
, GATE CHARGE (nC)
I
D
= 44A
I
D
= 22A
WAVEFORMS IN
DESCENDING ORDER:
t
P
V
GS
0.01
L
I
AS
+
-
V
DS
V
DD
R
G
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
0
HUF75637P3, HUF75637S3S
相關(guān)PDF資料
PDF描述
HUF75637S3S REPLACEMENT BLADE FOR PTS-10
HUF76107P3 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
HUF76107D3 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
HUF76107D3S 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
HUF76107P3 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HUF75637P3T 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 44A I(D) | TO-220AB
HUF75637S3 制造商:Rochester Electronics LLC 功能描述:- Bulk
HUF75637S3_NR4895 功能描述:MOSFET 100V 41A 0.03Ohm N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF75637S3S 功能描述:MOSFET 44a 100V 0.030 Ohm N-Ch MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF75637S3ST 功能描述:MOSFET 44a 100V 0.030 Ohm N-Ch MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube