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參數(shù)資料
| 型號： | HUF75623P3 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 22A, 100V, 0.064 Ohm, N-Channel, UltraFET Power MOSFETs |
| 中文描述： | 22 A, 100 V, 0.064 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 1/10頁 |
| 文件大小： | 199K |
| 代理商： | HUF75623P3 |
2001 Fairchild Semiconductor Corporation
HUF75623P3, HUF75623S3ST Rev. B
HUF75623P3, HUF75623S3ST
22A, 100V, 0.064 Ohm, N-Channel,
UltraFET Power MOSFETs
Packaging
Symbol
Features
Ultra Low On-Resistance
- r
DS(ON)
= 0.064
,
V
GS
=
10V
Simulation Models
- Temperature Compensated PSPICE and SABER
Electrical Models
- Spice and SABER Thermal Impedance Models
- www.fairchildsemi.com
Peak Current vs Pulse Width Curve
UIS Rating Curve
Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html
For severe environments, see our Automotive HUFA series.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
DRAIN
(FLANGE)
GATE
SOURDRAIN
HUF75623P3
JEDEC TO-220AB
JEDEC TO-263AB
HUF75623S3ST
GATE
SOURCE
DRAIN
(FLANGE)
D
G
S
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF75623P3
TO-220AB
75623P
HUF75623S3ST
TO-263AB
75623S
NOTE: When ordering, use the entire part number i.e., HUF75623P3
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
HUF75623P3, HUF75623S3ST
100
100
±
20
UNITS
V
V
V
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain to Gate Voltage (R
GS
= 20k
) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
C
= 100
o
C, V
GS
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
NOTE:
1. T
J
= 25
o
C to 150
o
C.
CAUTION:
Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
22
15
Figure 4
A
A
Figures 6, 14, 15
85
0.57
-55 to 175
W
W/
o
C
o
C
300
260
o
C
o
C
Data Sheet
December 2001
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HUF75623P3 | 22A, 100V, 0.064 Ohm, N-Channel, UltraFET Power MOSFET |
| HUF75623S3 | 22A, 100V, 0.064 Ohm, N-Channel, UltraFET Power MOSFETs |
| HUF75623S3ST | 22A, 100V, 0.064 Ohm, N-Channel, UltraFET Power MOSFETs |
| HUF75623S3ST | 22A, 100V, 0.064 Ohm, N-Channel,UltraFET Power MOSFETs(22A, 100V, 0.064 Ω N溝道邏輯電平功率MOS場效應(yīng)管) |
| HUF75631S3ST | 33A, 100V, 0.040 Ohm, N-Channel,UltraFET Power MOSFETs(33A, 100V, 0.040Ω N溝道邏輯電平功率MOS場效應(yīng)管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HUF75623S3 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:22A, 100V, 0.064 Ohm, N-Channel, UltraFET Power MOSFETs |
| HUF75623S35T | 制造商:Intersil Corporation 功能描述: |
| HUF75623S3S | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75623S3ST | 功能描述:MOSFET 22a 100V N-Ch UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75631P3 | 功能描述:MOSFET 33a 100V N-Ch UltraFET 0.40 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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