- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384445 > HUF75617D3S (INTERSIL CORP) 16A, 100V, 0.090 Ohm, N-Channel,UltraFET Power MOSFETs(16A, 100V, 0.090 Ω,N溝道超快功率MOS場效應(yīng)管) PDF資料下載
參數(shù)資料
| 型號： | HUF75617D3S |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 16A, 100V, 0.090 Ohm, N-Channel,UltraFET Power MOSFETs(16A, 100V, 0.090 Ω,N溝道超快功率MOS場效應(yīng)管) |
| 中文描述： | 16 A, 100 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 文件頁數(shù)： | 1/11頁 |
| 文件大?。?/td> | 240K |
| 代理商： | HUF75617D3S |
1
TM
File Number
4897
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE is a registered trademark of MicroSim Corporation. SABER is a trademark of Analogy, Inc.
UltraFET is a registered trademark of Intersil Corporation.
1-888-INTERSIL or 321-724-7143
|
Intersil and Design is a trademark of Intersil Corporation.
Copyright
Intersil Corporation 2000
HUF75617D3, HUF75617D3S
16A, 100V, 0.090 Ohm, N-Channel,
UltraFET Power MOSFETs
Packaging
JEDEC TO-251AA
Symbol
Features
Ultra Low On-Resistance
- r
DS(ON)
= 0.090
,
V
GS
=
10V
Simulation Models
- Temperature Compensated PSPICE and SABER
Electrical Models
- Spice and SABER Thermal Impedance Models
- www.intersil.com
Peak Current vs Pulse Width Curve
UIS Rating Curve
JEDEC TO-252AA
DRAIN
(FLANGE)
GATE
SDRAIN
HUF75617D3
HUF75617D3S
GATE
SOURCE
DRAIN
(FLANGE)
D
G
S
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF75617D3
TO-251AA
75617D
HUF75617D3S
TO-252AA
75617D
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUF75617D3ST.
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
HUF75617D3,
HUF75617D3S
UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain to Gate Voltage (R
GS
= 20k
) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
C
= 100
o
C, V
GS
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
DM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .UIS
100
V
100
V
±
20
V
16
11
Figure 4
A
A
Figures 6, 14, 15
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
64
0.43
W
W/
o
C
o
C
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
NOTE: T
J
= 25
o
C to 150
o
C.
CAUTION:
Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
-55 to 175
300
260
o
C
o
C
Data Sheet
June 2000
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HUF75617D3 | 16A, 100V, 0.090 Ohm, N-Channel, UltraFET Power MOSFETs |
| HUF75617D3S | 16A, 100V, 0.090 Ohm, N-Channel, UltraFET Power MOSFETs |
| HUF75617D3ST | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 16A I(D) | TO-252AA |
| HUF75623P3 | 22A, 100V, 0.064 Ohm, N-Channel, UltraFET Power MOSFETs |
| HUF75623P3 | 22A, 100V, 0.064 Ohm, N-Channel, UltraFET Power MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HUF75617D3ST | 功能描述:MOSFET 16a 100V N-Ch 0.090Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75623P3 | 功能描述:MOSFET 22a 100V N-Ch UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75623S3 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:22A, 100V, 0.064 Ohm, N-Channel, UltraFET Power MOSFETs |
| HUF75623S35T | 制造商:Intersil Corporation 功能描述: |
| HUF75623S3S | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。