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參數(shù)資料
| 型號(hào)： | HUF75545S3S |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | 75A, 80V, 0.010 Ohm, N-Channel, UltraFET Power MOSFET |
| 中文描述： | 75 A, 80 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | TO-263AB, 3 PIN |
| 文件頁(yè)數(shù)： | 1/10頁(yè) |
| 文件大?。?/td> | 270K |
| 代理商： | HUF75545S3S |
2002 Fairchild Semiconductor Corporation
HUF75545P3 / HUF75545S3 / HUF75545S3S Rev. C
HUF75545P3, HUF75545S3, HUF75545S3S
75A, 80V, 0.010 Ohm, N-Channel,
UltraFET
Power MOSFET
Packaging
JEDEC TO-220AB
Symbol
Features
Ultra Low On-Resistance
- r
DS(ON)
= 0.010
,
V
GS
=
10V
Simulation Models
- Temperature Compensated PSPICE and SABER
Electrical Models
- Spice and SABER Thermal Impedance Models
- www.fairchildsemi.com
Peak Current vs Pulse Width Curve
UIS Rating Curve
Ordering Information
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html
For severe environments, see our Automotive HUFA series.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
JEDEC TO-263AB
JEDEC TO-262AA
DRAIN
(FLANGE)
GATE
SOUDRAIN
HUF75545P3
GATE
SOURCE
DRAIN
(FLANGE)
HUF75545S3S
DRAIN
(FLANGE)
SOURDRAIN
GATE
HUF75545S3
D
G
S
PART NUMBER
PACKAGE
BRAND
HUF75545P3
TO-220AB
75545P
HUF75545S3
TO-262AA
75545S
HUF75545S3S
TO-263AB
75545S
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-263AB variant in tape and reel, e.g., HUF75545S3ST.
HUF75545P3, HUF75545S3,
HUF75545S3S
80
80
±
20
UNITS
V
V
V
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DSS
Drain to Gate Voltage (R
GS
= 20k
) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
Continuous (T
C
= 100
o
C, V
GS
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
NOTES:
1. T
J
= 25
o
C to 150
o
C.
CAUTION:
Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
75
73
Figure 4
Figure 6
270
1.8
-55 to 175
A
A
W
W/
o
C
o
C
300
260
o
C
o
C
Data Sheet
September 2002
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HUF75617D3 | 16A, 100V, 0.090 Ohm, N-Channel,UltraFET Power MOSFETs(16A, 100V, 0.090 Ω,N溝道超快功率MOS場(chǎng)效應(yīng)管) |
| HUF75617D3S | 16A, 100V, 0.090 Ohm, N-Channel,UltraFET Power MOSFETs(16A, 100V, 0.090 Ω,N溝道超快功率MOS場(chǎng)效應(yīng)管) |
| HUF75617D3 | 16A, 100V, 0.090 Ohm, N-Channel, UltraFET Power MOSFETs |
| HUF75617D3S | 16A, 100V, 0.090 Ohm, N-Channel, UltraFET Power MOSFETs |
| HUF75617D3ST | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 16A I(D) | TO-252AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HUF75545S3ST | 功能描述:MOSFET 75a 80V 0.010 Ohm N-Ch MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75545S3ST_F101 | 制造商:Fairchild Semiconductor Corporation 功能描述:HUF75545S3S Series N-Channel 80 V 0.01 Ohm UltraFET Power Mosfet - TO-263AB 制造商:FAIRCHILD 功能描述:0 |
| HUF75545S3ST_NL | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HUF7554S3S | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HUF75617D3 | 功能描述:MOSFET 16a 100V N-Ch 0.090Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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