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參數(shù)資料
| 型號： | HUF75542S3S |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 75A, 80V, 0.014 Ohm, N-Channel, UltraFET Power MOSFETs |
| 中文描述： | 75 A, 80 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 文件頁數(shù)： | 2/11頁 |
| 文件大?。?/td> | 166K |
| 代理商： | HUF75542S3S |
2
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
μ
A, V
GS
= 0V (Figure 11)
80
-
-
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 75V, V
GS
= 0V
-
-
1
μ
A
V
DS
= 70V, V
GS
= 0V, T
C
= 150
o
C
-
-
250
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
=
±
20V
-
-
±
100
nA
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
μ
A (Figure 10)
2
-
4
V
Drain to Source On Resistance
r
DS(ON)
I
D
= 75A, V
GS
= 10V (Figure 9)
-
0.012
0.014
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Case
R
θ
JC
TO-220 and TO-263
-
-
0.65
o
C/W
Thermal Resistance Junction to
Ambient
R
θ
JA
-
-
62
o
C/W
SWITCHING SPECIFICATIONS
(V
GS
= 10V)
Turn-On Time
t
ON
V
DD
= 40V, I
D
= 75A
V
GS
=
10V,
R
GS
= 3.9
(Figures 18, 19)
-
-
195
ns
Turn-On Delay Time
t
d(ON)
-
12.5
-
ns
Rise Time
t
r
-
117
-
ns
Turn-Off Delay Time
t
d(OFF)
-
50
-
ns
Fall Time
t
f
-
80
-
ns
Turn-Off Time
t
OFF
-
-
195
ns
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Q
g(TOT)
V
GS
= 0V to 20V
V
DD
= 40V,
I
D
= 75A,
I
g(REF)
= 1.0mA
(Figures 13, 16, 17)
-
150
180
nC
Gate Charge at 10V
Q
g(10)
V
GS
= 0V to 10V
-
80
96
nC
Threshold Gate Charge
Q
g(TH)
V
GS
= 0V to 2V
-
5.7
7
nC
Gate to Source Gate Charge
Q
gs
-
15
-
nC
Gate to Drain "Miller" Charge
Q
gd
-
33
-
nC
CAPACITANCE SPECIFICATIONS
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
(Figure 12)
-
2750
-
pF
Output Capacitance
C
OSS
-
700
-
pF
Reverse Transfer Capacitance
C
RSS
-
250
-
pF
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
I
SD
= 75A
-
-
1.25
V
I
SD
= 37.5A
-
-
1.00
V
Reverse Recovery Time
t
rr
I
SD
= 75A, dI
SD
/dt = 100A/
μ
s
-
-
102
ns
Reverse Recovered Charge
Q
RR
I
SD
= 75A, dI
SD
/dt = 100A/
μ
s
-
-
255
nC
HUF75542P3, HUF75542S3S
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HUF75542S3ST | 功能描述:MOSFET 75a 80V N-Ch UltraFET 0.014 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75545P3 | 功能描述:MOSFET 75a 80V 0.010 Ohm N-Ch MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75545P3 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| HUF75545P3_NL | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HUF75545P3_Q | 功能描述:MOSFET 75a 80V 0.010 Ohm N-Ch MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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