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參數(shù)資料
| 型號： | HTT1115E |
| 英文描述： | BJT |
| 中文描述： | 雙極型晶體管 |
| 文件頁數(shù)： | 3/9頁 |
| 文件大小： | 67K |
| 代理商： | HTT1115E |
HTT1127E
Rev.0, Nov.2002 page 3 of 9
Q1 Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Collector to base breakdown
voltage
V
(BR)CBO
15
V
I
C
= 10
μ
A, I
E
= 0
Collector cutoff current
I
CBO
100
120
0.1
μ
A
μ
A
μ
A
pF
V
CB
= 15 V, I
E
= 0
Collector cutoff current
I
CEO
1.0
V
CE
= 4 V, R
BE
= infinite
Emitter cutoff current
I
EBO
0.1
V
EB
= 0.8 V, I
C
= 0
DC current transfer ratio
h
FE
150
V
CE
= 1 V, I
C
= 5 mA
Reverse transfer capacitance C
re
0.3
0.45
V
CB
= 1 V, f = 1 MHz
Emitter ground
Gain bandwidth product
f
T
10
12
GHz
V
CE
= 1 V, I
C
= 5 mA,
f = 1 GHz
Forward transfer coefficient
|S
21
|
2
13
16
1.7
dB
Noise figure
NF
1.0
dB
V
CE
= 1 V, I
C
= 5 mA,
f = 900 MHz,
Γ
S
=
Γ
L
= 50
Q2 Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Collector to base breakdown
voltage
V
(BR)CBO
15
V
I
C
= 10
μ
A, I
E
= 0
Collector cutoff current
I
CBO
90
120
0.1
μ
A
μ
A
μ
A
pF
V
CB
= 15 V, I
E
= 0
Collector cutoff current
I
CEO
0.1
V
CE
= 4 V, R
BE
= infinite
Emitter cutoff current
I
EBO
0.1
V
EB
= 1.5 V, I
C
= 0
DC current transfer ratio
h
FE
140
V
CE
= 1 V, I
C
= 5 mA
Reverse transfer capacitance C
re
0.50
0.65
V
CB
= 1 V, f = 1 MHz
Emitter ground
Gain bandwidth product
f
T
2.0
4.0
GHz
V
CE
= 1 V, I
C
= 5 mA,
f = 1 GHz
Forward transfer coefficient
|S
21
|
2
7
11
2.3
dB
Noise figure
NF
1.7
dB
V
CE
= 1 V, I
C
= 5 mA,
f = 900 MHz
Γ
S
=
Γ
L
= 50
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