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| 型號： | HSSR-8400 |
| 英文描述： | 400 V/10 Ohm, General Purpose, 1 Form A, Solid State Relay |
| 中文描述： | 400 V/10歐姆，通用，1 A型，固態(tài)繼電器 |
| 文件頁數(shù)： | 5/13頁 |
| 文件大?。?/td> | 261K |
| 代理商： | HSSR-8400 |
1-469
Insulation and Safety Related Specifications
Parameter
Min. External Air Gap
(External Clearance)
Min. External Tracking Path
(External Creepage)
Min. Internal Plastic Gap
(Internal Clearance)
Symbol
L(IO1)
Value
7.0
Units
mm
Conditions
Measured from input terminals to output
terminals, shortest distance through air
Measured from input terminals to output
terminals, shortest distance path along body
Through insulation distance, conductor to
conductor, usually the direct distance
between the photoemitter and photodetector
inside the optocoupler cavity
DIN IEC 112/VDE 0303 PART 1
L(IO2)
8.5
mm
0.5
mm
Tracking Resistance
(Comparative Tracking Index)
Isolation Group
CTI
200
volts
IIIa
Material Group (DIN VDE 0110, 1/89, Table 1)
Regulatory Information
The HSSR-8400 has been
approved by the following
organizations:
UL
Recognized under UL 508,
Component Recognition
Program, Industrial Control
Switches, File E142465.
CSA
Approved under CAN/CSA-C22.2
No. 14-95, Industrial Control
Equipment, File LR 87683.
Absolute Maximum Ratings
Storage Temperature ................................................... -55
°
C to+125
°
C
Operating Temperature - T
A
.......................................... -40
°
C to +85
°
C
Case Temperature - T
C
.......................................................... +105
°
C
[1]
Lead Solder Temperature ....260
°
C for 10 S (1.6 mm below seating plane)
Average Input Current - I
F
............................................................20 mA
Repetitive Peak Input Current - I
F
............................................... 40 mA
(Pulse Width
≤
1 ms; duty cycle
≤
50%)
Transient Peak Input Current - I
F
...............................................100 mA
(Pulse Width
≤
200
μ
s; duty cycle
≤
1%)
Reverse Input Voltage - V
R
................................................................3 V
Input Power Dissipation..............................................................40 mW
Output Voltage (T
A
= 25
°
C)
Connection A - V
O
..................................................... -400 to +400 V
Connection B - V
O
........................................................... 0 to +400 V
Average Output Current - Figure 3 (T
A
= 25
°
C, T
C
≤
70
°
C)
Connection A - I
O
.....................................................................0.15 A
Connection B - I
O
.......................................................................0.3 A
Single Shot Peak Output Current
(100 ms pulse width, T
A
= 25
°
C, I
F
= 10 mA)
Connection A - I
O
...................................................................... 1.0 A
Connection B - I
O
...................................................................... 2.0 A
Output Power Dissipation ..................................................... 750 mW
[2]
Infrared and Vapor Phase Reflow Temperature
(Option #300) .........................................See Fig. 1, Thermal Profile
Thermal Resistance
Typical Output MOSFET Junction
to Case –
θ
JC
= 55
°
C/W
Demonstrated ESD
Performance
Human Body Model: MIL-STD-
883 Method 3015.7 - 16 kV
Machine Model: EIAJ 1988.3.28
Version 2), Test Method 20,
Condition C – 1200 V
Option 300 – surface mount classification is Class A in accordance with CECC 00802.
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