參數(shù)資料
型號(hào): HSMS-2810-BLK
英文描述: Surface Mount RF Schottky Barrier Diodes
中文描述: 表面貼裝射頻肖特基二極管
文件頁(yè)數(shù): 3/10頁(yè)
文件大?。?/td> 144K
代理商: HSMS-2810-BLK
3
Quad Capacitance
Capacitance of Schottky diode
quads is measured using an
HP4271 LCR meter. This
instrument effectively isolates
individual diode branches from
the others, allowing accurate
capacitance measurement of each
branch or each diode. The
conditions are: 20 mV R.M.S.
voltage at 1 MHz. Agilent defines
this measurement as
CM
, and it
is equivalent to the capacitance of
the diode by itself. The equivalent
diagonal and adjacent
capacitances can then be
calculated by the formulas given
below.
In a quad, the diagonal capaci-
tance is the capacitance between
points A and B as shown in the
figure below. The diagonal
capacitance is calculated using
the following formula
C
x C
C
DIAGONAL
= _______ + _______
C
1
+ C
2
C
x C
4
C
3
+ C
4
C
1
C
2
C
4
C
3
A
B
C
The equivalent adjacent
capacitance is the capacitance
between points A and C in the
figure below. This capacitance is
calculated using the following
formula
1
C
ADJACENT
= C
1
+ ____________
1
––
+
+
––
C
2
C
3
––
1
C
4
SPICE Parameters
Parameter
Units
HSMS-281x
B
V
C
J0
E
G
I
BV
I
S
N
R
S
P
B
P
T
M
V
pF
eV
A
A
25
1.1
0.69
E-5
4.8E-9
1.08
10
0.65
2
0.5
V
C
j
R
j
R
S
R
= 8.33 X 10
-5
nT
I
b
+ I
s
where
I
b
= externally applied bias current in amps
I
s
= saturation current (see table of SPICE parameters)
T
= temperature,
°
K
n = ideality factor (see table of SPICE parameters)
Note:
To effectively model the packaged HSMS-281x product,
please refer to Application Note AN1124.
R
S
= series resistance (see Table of SPICE parameters)
C
j
= junction capacitance (see Table of SPICE parameters)
Linear Equivalent Circuit, Diode Chip
相關(guān)PDF資料
PDF描述
HSMS-2810-TR1 Surface Mount RF Schottky Barrier Diodes
HSMS-2810-TR2 Surface Mount RF Schottky Barrier Diodes
HSMS-2812-BLK Surface Mount RF Schottky Barrier Diodes
HSMS-2812-TR1 Surface Mount RF Schottky Barrier Diodes
HSMS-2812-TR2 Surface Mount RF Schottky Barrier Diodes
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參數(shù)描述
HSMS-2810-BLKG 功能描述:肖特基二極管與整流器 20 VBR 1.2 pF RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
HSMS2810T31 制造商:HP 功能描述:*
HSMS-2810-TR1 功能描述:DIODE SCHOTTKY GP 20V 1A SOT-23 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> RF 二極管 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 二極管類型:PIN - 單 電壓 - 峰值反向(最大):50V 電流 - 最大:50mA 電容@ Vr, F:0.4pF @ 50V,1MHz 電阻@ Vr, F:4.5 歐姆 @ 10mA,100MHz 功率耗散(最大):100mW 封裝/外殼:SC-70,SOT-323 供應(yīng)商設(shè)備封裝:3-MCP 包裝:帶卷 (TR)
HSMS-2810-TR1G 功能描述:肖特基二極管與整流器 20 VBR 1.2 pF RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
HSMS-2810-TR2 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Surface Mount RF Schottky Barrier Diodes